Extremely scaled CMOS materials Research TeamAbout
Extremely scaled CMOS technology
We are currently advancing R&D with the primary objective of enhancing the performance of CMOS transistors, which serve as integral components of state-of-the-art logic semiconductors. To address the challenges associated with the miniaturization of CMOS transistors, our efforts are directed towards the development of materials and process technologies. These technologies encompass non-Si materials, including Ge and two-dimensional materials, in addition to the foundational Si materials that underpin CMOS technology. Furthermore, we are actively engaged in the advancement of “IMPULSE-TCAD”, an original TCAD developed by AIST. This initiative is driven by the aim of establishing comprehensive design guidelines for advanced CMOS devices. Through the utilization of these CMOS technologies, we are advancing the development of innovative devices, such as nanosheet transistors, CFETs, and novel material channel transistors.
