Device Simulation Research Team

In addition to industry-standard TCAD (Technology Computer-Aided Design) simulations, we employ quantum- and atomistic-level simulation methods, including the nonequilibrium Green's function approach and first-principles calculations, to predict and analyze the behavior of next-generation devices such as silicon nanosheet transistors and two-dimensional semiconductor transistors. To support this, we are advancing the research and development of the required simulation technologies, while also improving the performance and functionality of "Impulse TCAD," a next-generation device simulator developed by AIST.