Compound Semiconductor Device


Group Outline and Primary Goal

We promote research and development on innovative photonic and electronic devices made of compound and organic semiconductors, as represented by light-emitting devices, detectors, and optical modulation devices. Those devices are developed by utilizing unique physical phenomenon in semiconductor microstructures that are created by highly-sophisticated crystal growth technology such as MBE and MOCVD, and also by microfabrication technology in the micro- and nano-scale. Our ultimate goal is that we contribute to create an environment-friendly advanced information society by generating research and development of the cutting-edge semiconductor technology.


Key Themes of Research

1) Research and development of green/yellow semiconductor lasers made of group II-VI compound semiconductors.


Schematic of a semiconductor laser

Photograph and spectra showing the continuous wave operation at room temperature of a BeZnCdSe quantum-well semiconductor laser



2) Research and development of high-efficiency and high-directionality light-emitting diodes based on the evanescent wave coupling effect in a small ridge or truncated-cone structure.

SEM image of the small truncated cones fabricated on the surface of a GaN blue LED

Comparison of the light output intensity of a truncated-cone type LED with that of a flat-surface device.



3) Compact and high power (quick charging) wireless power transfer (WPT) technology using GaN electronic device

Demonstration of GaN-WPT using a drone



Our Technologies and Equipment

  • MBE crystal growth technology of group III-V and II-VI compound semiconductors
  • MOCVD crystal growth technology of group III-V compound semiconductors
  • Fabrication and characterization technology of semiconductor lasers and light-emitting diodes
  • Fabrication and characterization technology of organic semiconductor thin films.
  • Physical property characterization technology, such as photoluminescence, time- and spatial-resolved photoluminescence
  • High-speed WPT technology and high-performance compact power-conversion circuit.

Articles

【2019】
・F.Sasaki et al., “Optically pumped lasing of cyano-substituted thiophene/phenylene co-oligomer microcrystals fabricated by the slide boat method“, Jpn.J.Appl.Phys. 58-SB, SBBG05 (2019).
・N.Kumagai et al., “Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs“, J.Crystal Growth 507, 437 (2019).
・N.Kumagai et al., “Effects of N2 and NH3 plasma exposure on the surface topography of p-GaN under quasi-atmospheric pressure“, Surfaces and Interfaces 14, 92 (2019).

【2018】
・R.Akimoto et al., “Vertically Coupled Suspended Silicon Nitride Microdisk Based Optical Sensor”, IEEE Photonics Technology Letters 30, 1507 (2018).
・S.Zhai et al., “Vertically integrated waveguide self-coupled resonator based tunable optical filter”, Optics Letters 43, 3766 (2018).
・Y.Higase et al., “High-gain and wide-band optical amplifications induced by a coupled excited state of organic dye molecules co-doped in polymer waveguide“, Optics Letters 43, 1714 (2018).
・V.C.Nguyen et al., “Single-crystal perovskite CH 3 NH 3 PbBr 3 prepared by cast capping method for light-emitting diodes”, Jpn.J.Appl.Phys. 57, 04FL10 (2018).
・K.Bando et al., “Self‐Assembled Organic Crystalline Microring Cavities with High Q‐Factors”, Chem.Nano Mater. 4 936 (2018).
・D.Okada et al., “π-Electronic Co-crystal Microcavities with Selective Vibronic-Mode Light Amplification: Toward Forster Resonance Energy Transfer Lasing”, Nano Letters 18, 4396 (2018).
・X.Wang et al., “High‐Efficiency, High‐Power AlGaInP Thin‐Film LEDs with Micron‐Sized Truncated Cones as Light‐Extraction Structures”, Phys.Status Solidi A, 1700562 (2018).
・M.Nagase et al., “Stabilization of Nonvolatile Memory Operation Using GaN/AlN Resonant Tunneling Diodes by Reduction in Structural Inhomogeneity”, Jpn.J.Appl.Phys. 57, 070310 (2018).
・N.Kurahashi et al., “Whispering gallery mode lasing in lead halide perovskite crystals grown in microcapillary”, Appl.Phys.Lett. 113, 011107 (2018).
・S.Gozu et al., “Highly strained InAlP/InGaAs- based coupled double quantum wells on InP substrates”, Jpn.J.Appl.Phys. 57, 055501 (2018).
・X.Shen et al., “Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition”, Jpn.J.Appl.Phys. 57, 010306 (2018).
・R.Akimoto, “Recombination-Enhanced Effect in Green/Yellow Luminescence from BeZnCdSe Quantum Wells Grown by Molecular Beam Epitaxy”, J.Electron.Mater. (2018), https://doi.org/10.1007/s11664-018-6090-3.
・V-C.Nguyen et al., “Single-crystal perovskite CH3NH3PbBr3 prepared by cast capping method for light-emitting diodes”, Jpn.J.Appl.Phys. 57, 04FL10 (2018).

【2017】
・J.Feng et al., “Three-dimensional cross-coupled silicon nitride racetrack resonator-based tunable optical filter”,IEEE Photonics Technology Letters 29, 771 (2017).
・F.Sasaki et al., “Optically pumped lasing and electroluminescence of formamidinium perovskite semiconductors prepared by the cast-capping method”, Jpn.J.Appl.Phys. 57, 03EH05 (2017). ・
・S.Kushida et al., “Low-Threshold Whispering Gallery Mode Lasing from Self-Assembled Microspheres of Single-Sort Conjugated Polymers”, Advanced Optical Materials 5, 1700123 (2017).
・V-C. Nguyen et al., “Single-crystal perovskites prepared by simple solution process: Cast-capping method”, Journal of Crystal Growth 468, 796 (2017).
・ S.Dokiya et al., “Fabrication of polycrystalline films of cyano-substituted thiophene/phenylene co-oligomer by vaporized film deposition method”, Journal of Crystal Growth 468, 792 (2017).
・K.Torii et al., “Organic Nanowire Lasers with Epitaxially Grown Crystals of Semiconducting Oligomers”, Chem.Nano.Mater. 3, 625 (2017).
・N.Takada et al., “Thermoluminescence of coral skeletons: a high-sensitivity proxy of diagenetic alteration of aragonite”, Scientific Reports 7, 17969 (2017).
・T.Miyamae et al., “Direct probing of charge carrier behavior in multilayered organic light-emitting diode devices by time-resolved electric-field-induced sum-frequency generation spectroscopy”, Appl.Phys.Express 10, 12101 (2017).

【~2016】
・M. Nagase, et al., "Resistance switching memory operation using the bistability in current-voltage characteristics of GaN/AlN resonant tunneling diodes", JAP.J.Appl.Phys., 55(10), 1003011 (2016).
・J. V. Gonzalez-Fernandez, et al., "Residual electric fields of InGaAs/AlAs/AlAsSb (001) coupled double quantum wells structures assessed by photoreflectance anisotropy", Int.J.Modern Phys.B, 30, 1550248 (2016).
・J. Feng, et al., "BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation", Appl.Phys.Lett., 107(16), 161101-1 (2015).
・G. Wang, et al., "Controlling the directionality of spontaneous emission by evanescent wave coupling", Appl.Phys.Lett., 107(13), 131112-1 (2015).