Compound Semiconductor Device
Group Outline and Primary Goal
We promote research and development on innovative photonic and electronic devices made
of compound and organic semiconductors, as represented by light-emitting devices, detectors, and optical
modulation devices. Those devices are developed by utilizing unique physical phenomenon in semiconductor
microstructures that are created by highly-sophisticated crystal growth technology such as MBE and MOCVD, and
also by microfabrication technology in the micro- and nano-scale.
Our ultimate goal is that we contribute to create an environment-friendly advanced information society by
generating research and development of the cutting-edge semiconductor technology.
Key Themes of Research
1) Research and development of green/yellow semiconductor lasers made of group II-VI compound
semiconductors.
2) Research and development of
high-efficiency and high-directionality light-emitting diodes based on the evanescent
wave coupling effect in a small ridge or truncated-cone structure.
3) Compact and high power (quick charging) wireless power transfer (WPT) technology using GaN electronic device
3) Compact and high power (quick charging) wireless power transfer (WPT) technology using GaN electronic device
Our Technologies and Equipment
- MBE crystal growth technology of group III-V and II-VI compound semiconductors
- MOCVD crystal growth technology of group III-V compound semiconductors
- Fabrication and characterization technology of semiconductor lasers and light-emitting diodes
- Fabrication and characterization technology of organic semiconductor thin films.
- Physical property characterization technology, such as photoluminescence, time- and spatial-resolved photoluminescence
- High-speed WPT technology and high-performance compact power-conversion circuit.