Novel Functional Devices Team

We are developing technologies for power devices, environmentally resistant devices, quantum sensor devices, and other devices with new functions by utilizing the unique properties of wide bandgap semiconductors such as SiC and diamond.

Team Research Theme

We are developing technologies for power devices, environmentally resistant devices, quantum sensor devices, and other devices with new functions by utilizing the unique properties of wide bandgap semiconductors such as SiC and diamond.

proprietary technology

• n- and p-type conduction control
• NV Center Formation
• device process
• Surface and Interface Control
• Crystal Evaluation

Priority Research

• Diamond Semiconductor Device Development
• Development of quantum devices using diamond NV centers
• SiC MOS interface control
• Power Device Application Technology

Major Patents and Publications

1. “Diamond Schottky-𝑝𝑛 diode with high forward current density and fast switching operation”, T. Makino, S. Tanimoto, Y. Hayashi, H. Kato, N. Tokuda, M. Ogura, D. Takeuchi, K. Oyama, H. Ohashi, H. Okushi, S. Yamasaki, Appl. Phys. Lett. 94, 262101 (2009).
2. “High-Voltage Vacuum Switch with a Diamond p–i–n Diode Using Negative Electron Affinity”, D. Takeuchi, T. Makino, H. Kato, M. Ogura, H. Okushi, H. Ohashi, S. Yamasaki, Japanese Journal of Applied Physics 51, 090113 (2012).
3. “Diamond bipolar junction transistor device with phosphorus-doped diamond base layer”, H. Kato, K. Oyama, T.Makino, M. Ogura, D. Takeuchi, S. Yamasaki, Diamond and Related Materials 27–28, 19 (2012).
4. “Electrically driven single-photon source at room temperature in diamond”, N. Mizuochi, T. Makino, H. Kato, D. Takeuchi, M. Ogura, H. Okushi, M. Nothaft, P. Neumann, A. Gali, F. Jelezko, J. Wrachtrup & S. Yamasaki, Nature Photonics 6, 299 (2012).
5. “Effects of interface state density on 4H-SiC n-channel field-effect mobility”, H. Yoshioka, J. Senzaki, A. Shimozato, Y. Tanaka, H Okumura, Applied Physics Letters 104, 083516 (2014).
6. “Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics”, T. Matsumoto, H. Kato, K. Oyama, T. Makino, M. Ogura, D. Takeuchi, T. Inokuma, N. Tokuda, S. Yamasaki, Scientific Reports 6, 31585 (2016).
7. “Ultra-long coherence times amongst room-temperature solid-state spins”, E. D. Herbschleb, H. Kato, Y. Maruyama, T. Danjo, T. Makino, S. Yamasaki, I. Ohki, K. Hayashi, H. Morishita, M. Fujiwara & N. Mizuochi, Nature Communications 10, 3766 (2019).
8. “Photoelectrical detection of nitrogen-vacancy centers by utilizing diamond lateral p–i–n diodes”, T. Murooka, M. Shiigai, Y. Hironaka, T. Tsuji, B. Yang, T. M. Hoang, K. Suda, K. Mizuno, H. Kato, T. Makino, M. Ogura, S. Yamasaki, M. Hatano, T. Iwasaki, Appl. Phys. Lett. 118, 253502 (2021).