構成メンバー

メンバー略歴

渋谷　圭介

略歴

2001年 3月
東京工業大学理学部 卒業
2003年 3月
東京工業大学総合理工学研究科物質創造科学専攻修士課程　修了
2006年 3月
東京大学新領域創成科学研究科物質系専攻博士課程　修了
2006年 4月
東京大学物性研究所　学術研究支援員
2006年 10月
アレキサンダーフォンフンボルト財団研究員（ユーリッヒ研究所）
2008年 4月
ユーリッヒ研究所　博士研究員
2009年 3月
理化学研究所　特別研究員
2012年 4月
産業技術総合研究所　電子光技術研究部門
強相関エレクトロニクスグループ　研究員
2017年 10月
同　主任研究員

研究分野

固体物理、酸化物薄膜材料、酸化物エレクトロニクス

学会活動・社会貢献

応用物理学会

研究業績内容

酸化物界面における電界効果キャリア変調を用いた金属-絶縁体転移の発現、層状ペロブスカイト構造単結晶薄膜の作製、欠陥密度-抵抗スイッチ現象の相関の実証、二酸化バナジウムの金属-絶縁体転移温度の制御など。

2004年7月 21世紀ＣＯＥ強相関物理工学 教育プロジェクト「すだち」
2006年10月 Alexander von Humboldt財団リサーチフェローシップ
2007年3月 丸文国際交流研究助成

主な論文

  1. Y. Tomioka, N. Shirakawa, K. Shibuya, and I. H. Inoue, “Enhanced superconductivity close to a non-magnetic quantum critical point in electron-doped strontium titanate”, Nature Communications 10, 738 (2019).
  2. K, Shibuya, Y. Atsumi, T. Yoshida, Y. Sakakibara, M. Mori, and A. Sawa, “Silicon waveguide optical modulator driven by metal-insulator transition of vanadium dioxide cladding layer”, Optics Express 27, 4147 (2019).
  3. K. Shibuya and A. Sawa,“Raman scattering of epitaxial vanadium dioxide films with low-temperature monoclinic phase”, Journal of Applied Physics 122, 015307 (2017).
  4. K. Shibuya and A. Sawa, “Electrolyte gating on oxygen-deficient VO2 thin films”, Journal of Nanoelectronics and Optoelectronics 5, 571 (2016).
  5. K. Miyazaki, K. Shibuya,　M. Suzuki, K. Sakai, J. Fujita, and A. Sawa, “Chromium-niobium co-doped vanadium dioxide films: large temperature coefficient of resistance and practically no thermal hysteresis of the metal-insulator transition”, AIP Advances 6, 055012 (2016).
  6. K. Shibuya and A. Sawa, “Modulation of Metal-Insulator Transition in VO2 by Electrolyte Gating-Induced Protonation”, Advanced Electronic Materials 2, 1500131 (2016).
  7. K. Shibuya and A. Sawa, “Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition”, AIP Advances 5, 107118 (2015).
  8. K. Miyazaki, K. Shibuya,　M. Suzuki, H. Wado, and A. Sawa, “High temperature coefficient of resistance of low-temperature-grown VO2 films on TiO2-buffered SiO2/Si (100) substrates”, Journal of Applied Physics 118, 055301 (2015).
  9. M. Nakano, D. Okuyama, K. Shibuya, M. Mizumaki, H. Ohsumi, M. Yoshida, M. Takata, M. Kawasaki, Y. Tokura, T. Arima and Y. Iwasa, “Distinct substrate effect on the reversibility of the metal-insulator transitions in electrolyte-gated VO2 thin films”, Advanced Electronic Materials 1, 1500093 (2015).
  10. D. Okuyama, K. Shibuya, R. Kumai, Y. Kitagawa, T. Suzuki, Y. Yamasaki, H. Nakao, Y. Murakami, M. Kawasaki, Y. Taguchi, T. Arima, and Y. Tokura, “X-ray study of metal-insulator transitions induced by W-doping and photoirradiation in VO2 films”, Physical Review B 91, 064101 (2015).
  11. K. Miyazaki, K. Shibuya, M. Suzuki, H. Wado, and A. Sawa, “Correlation between thermal hysteresis width and broadening of metal-insulator transition in Cr and Nb doped VO2 films”, Japanese Journal of Applied Physics 53, 235123 (2014).
  12. K. Shibuya and A. Sawa, “Epitaxial growth and structural transition of VO2/MgF2(001)”, Japanese Journal of Applied Physics 53, 05FF03 (2014).
  13. D. Okuyama, M. Nakano, S.Takeshita, H. Ohsumi, S. Tardif, K. Shibuya, T. Hatano, H. Yumoto,T. Koyama, H. Ohashi, M. Takata, M. Kawasaki, T. Arima,Y. Tokura, and Y. Iwasa, “Gate-tunable gigantic lattice deformation in VO2”, Applied Physics Letters 104, 023507 (2014).
  14. M. Nakano, K. Shibuya, N. Ogawa, T. Hatano, M. Kawasaki, Y. Iwasa, and Y. Tokura, “Infrared-sensitive electrochromic device based on VO2”, Applied Physics Letters 103, 153503 (2013).
  15. K. Shibuya, J. Tsutsumi, T. Hasegawa, and A. Sawa, “Fabrication and Raman scattering study of epitaxial VO2 films on MgF2 (001) substrates”, Applied Physics Letters 103, 021604 (2013).
  16. M. Kubota, K. Shibuya, Y. Tokunaga, F. Kagawa, A. Tsukazaki, Y. Tokura, and M. Kawasaki, “Systematic control of stress-induced anisotropy in pseudomorphic iron garnet thin films”, J. Magn. Magn. Mater. 339, 63 (2013).
  17. M. Kubota, A. Tsukazaki, F. Kagawa, K. Shibuya, Y. Tokunaga, M. Kawasaki, and Y. Tokura, “Stress-induced perpendicular magnetization in epitaxial iron garnet thin films”, Appl. Phys. Exp. 5, 103002 (2012).
  18. M. Nakano, K. Shibuya, T. Hatano, S. Ono, M. Kawasaki, Y. Iwasa, and Y. Tokura, “Collective bulk carrier delocalization driven by electrostatic surface charge accumulation”, Nature 487, 459 (2012).
  19. J. S. Lee, K. Shibuya, M. Kawasaki, and Y. Tokura,“Optical investigation of metal-insulator transitions in V1-xWxO2 (0 < x < 0.33)”, Phys. Rev. B 85, 155110 (2012).
  20. E. Sakai, K. Yoshimatsu, K. Shibuya, H. Kumigashira, E. Ikenaga, M. Kawasaki, Y. Tokura, and M. Oshima,“Competition between instabilities of Peierls transition and Mott transition in W-doped VO2 thin films”, Phys. Rev. B 84, 195132 (2011).
  21. K. Shibuya, D. Okuyama, R. Kumai, Yamasaki, H. Nakao, Y. Murakami, Y. Taguchi, T. Arima, M. Kawasaki, and Y. Tokura,“An x-ray induced insulator-metal transition in a thin film of electron-doped VO2”, Phys. Rev. B 84, 165108 (2011).
  22. K. Shibuya, M. Kawasaki, and Y. Tokura,“Metal-insulator transitions in TiO2/VO2 superlattices”, Phys. Rev. B, 82, 205118 (2010).
  23. K. Shibuya, M. Kawasaki, and Y. Tokura, “Metal-insulator transition in epitaxial V1-xWxO2 (0 < x < 0.33) thin films”, Appl. Phys. Lett. 96, 022102 (2010).
  24. K. Shibuya, R. Dittmann, S. Mi, and R. Waser, “Impact of defect distribution on resistive switching characteristics of Sr2TiO4 thin films”, Advanced Materials, 22, 411 (2010).
  25. K. Shibuya, S. Mi, C.-L. Jia, P. Mueffels, and R. Dittmann, “Sr2TiO4 layered perovskite thin films grown by pulsed laser deposition”, Appl. Phys. Lett. 92, 241918 (2008).
  26. T. Ohnishi, K. Shibuya, T. Yamamoto, and M. Lippmaa, “Defects and transport in complex oxide thin films”, J. Appl. Phys. 103, 103703 (2008).
  27. K. Shibuya, T. Ohnishi, T. Uozumi, T. Sato, K. Nishio, and M. Lippmaa, “Observation of SrTiO3 in-gap states by depletion mode field effect”, Appl. Phys. Lett. 92, 032109 (2008).
  28. K. Shibuya, T. Ohnishi, M. Lippmaa, and M. Oshima, “Metallic conductivity at the CaHfO3/SrTiO3 interface”, Appl. Phys. Lett. 91, 232106 (2007).
  29. K. Shibuya, T. Ohnishi, T. Sato, and M. Lippmaa, “Metal-insulator transition in SrTiO3 induced by field effect”, J. Appl. Phys. 102, 083713 (2007).
  30. T. Sato, K. Shibuya, T. Ohnishi, K. Nishio, and M. Lippmaa, “Fabrication of SrTiO3 Field Effect Transistors with SrTiO3-δ Source and Drain Electrodes”, Jpn. J. Appl. Phys. 46, L515 (2007).
  31. T. Uozumi, K. Shibuya, T. Ohnishi, T. Sato, and M. Lippmaa, “Growth and characterization of epitaxial DyScO3 films on SrTiO3”, Jpn. J. Appl. Phys. 45, L830 (2006).
  32. M. Takizawa, H. Wadati, K. Tanaka, M. Hashimoto, T. Yoshida, A. Fujimori, A. Chikamatsu, H. Kumigashira, M. Oshima, K. Shibuya, T. Mihara, T. Ohnishi, M. Lippmaa, M. Kawasaki, H. Koinuma, S. Okamoto, and A. J. Millis, “Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices”, Phys. Rev. Lett. 97, 057601 (2006).
  33. K. S. Takahashi, M. Gabay, D. Jaccard, K. Shibuya, T. Ohnishi, M. Lippmaa and J.-M. Triscone, “Local switching of two-dimensional superconductivity using the ferroelectric field effect”, Nature 441, 195 (2006).
  34. K. Shibuya, T. Ohnishi, T. Uozumi, T. Sato, K. Nakajima, Y. Chikyow, H. Koinuma, M. Kawasaki, and M. Lippmaa, “Field-effect modulation of the transport properties of nondoped SrTiO3”, Appl. Phys. Lett. 88, 212116 (2006).
  35. K. Shibuya, T. Ohnishi, T. Uozumi, H. Koinuma, and M. Lippmaa, “An in situ transport measurement of interfaces between SrTiO3 (100) surface and an amorphous wide-gap insulator”, Appl. Surf. Sci. 252, 8147 (2006).
  36. K. Shibuya, T. Ohnishi, T. Uozumi, H. Koinuma, and M. Lippmaa, “The effect of annealing on SrTiO3 field-effect transistor devices” Thin Solid Films 486, 195 (2005).
  37. T. Mihara, K. Shibuya, T. Ohnishi, H. Koinuma, and M. Lippmaa, “Transport properties of ultrathin oxide films and nanostructures”, Thin Solid Films 486, 63 (2005).
  38. K. Shibuya, T. Ohnishi, M. Kawasaki, H. Koinuma, and M. Lippmaa, “Single crystal SrTiO3 field-effect transistors with an atomically flat amorphous CaHfO3 gate insulator”, Appl. Phys. Lett. 85, 425 (2004).
  39. K. Shibuya, T. Ohnishi, M. Kawasaki, H. Koinuma, and M. Lippmaa, “Domain structure of epitaxial CaHfO3 gate insulator films on SrTiO3”, Appl. Phys. Lett. 84, 2142 (2004).
  40. K. Shibuya, T. Ohnishi, M. Kawasaki, H. Koinuma, and M. Lippmaa, “Metallic LaTiO3/SrTiO3 superlattice films on the SrTiO3 (100) surface”, Jpn. J. Appl. Phys. 43, L1178 (2004).
  41. T. Ohnishi, K. Shibuya, M. Lippmaa, D. Kobayashi, H. Kumigashira, M. Oshima, and H. Koinuma, “Preparation of thermally stable TiO2-terminated SrTiO3 (100) substrate surfaces”, Appl. Phys. Lett. 85, 272 (2004).
  42. K. S. Takahashi, D. Matthey, D. Jaccard, J.-M. Triscone, K. Shibuya, T. Ohnishi, and M. Lippmaa, “Electrostatic modulation of the electronic properties of Nb-doped SrTiO3 superconducting films”, Appl. Phys. Lett. 84, 1722 (2004).
  43. K. Shibuya, T. Ohnishi, M. Kawasaki, H. Koinuma, and M. Lippmaa, “Growth and structure of wide-gap insulator films on SrTiO3”, Solid State Electronics 47, 2211 (2003).