IMPULSE TCAD
Impulse TCAD is a semiconductor device simulator originally developed by AIST to keep pace with future trends in semiconductor devices. It is equipped with automatic differentiation to facilitate the incorporation of physical models and parallel analysis to enable large-scale analysis.
"A TCAD device simulator for exotic materials and its application to a negative-capacitance FET", Tsutomu Ikegami, Koichi Fukuda, Junichi Hattori, Hidehiro Asai, and Hiroyuki Ota, J. Comp. Elec. 18, 534-542 (2019). https://doi.org/10.1007/s10825-019-01313-7
We were the first in the world to successfully perform time-lapse analysis of a Negative Capacitance FET using Impulse TCAD. (Ota et al. IEDM2016-2018) The figure shows the electrostatic potential distribution inside the device when the electrode voltage applied to the Negative Capacitance FET is changed.
This analysis image of Negative Capacitance FET was introduced as a video example of visualization software. Device simulation of semiconductor new principle transistor operation
IMPULSE TCAD user interface
A Graphical User Interface (GUI) developed with support from NEDO's Open Innovation Promotion Project for Accelerating IoT Technology Development has been implemented.
Environment for using IMPULSE TCAD
Impulse TCAD was jointly developed by the Information Technology Research Institute and the Device Technology Research Institute and runs on the AI Bridging Cloud Infrastructure (ABCI, https://abci.ai/) . If you are interested in using it, please contact us via email.
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