SiPC MPW

Activities of the consortium

AIST-SCR fab line
  • MPW shuttle/Dedicated prototyping
  • Value chain technology development
    Assembly, measurement, design …
  • Next generation technology development
consortium
shipping sample image
assembled module image

Status of 2020 MPW service

mpw shot layout image
Devices
Passive and Advanced Modulator
Agency
Sumitomo Corporation Kyushu Co.,Ltd.
Design
By users, PDK-based ⇒ Merged by the sales agency
Wafer process
AIST SCR
Post process
Sumitomo Corporation Kyushu Co.,Ltd.
Schedule
2020/5
Tape out
2020/6
Wafer process lot in
2020/9
Wafer process out
2020/10
Dicint & sorting ⇒ shipping
2021/1
Local cladding removal option
device structure image
fabricated wafer image

Device library list

Divice parameter Typical performance status reference
Channel waveguide(SIWG) Prop. Loss (TE) ~1.5 dB/cm Confirmed  
Rib waveguide, 110-nm half etch (RIB-110) Prop. Loss (TE） ~ 2 dB/cm Confirmed  
Modulator rib waveguide, 110-nm half etch (RIB-110) Prop. Loss (TE） ~ 20 dB/cm Confirmed Dopant for standard modulator implanted
Edge fiber coupler (ECPL) Insertion loss(TE/TM) ~2 dB, ~2 dB Confirmed HNAF, MFD=4.1um
  1dB BW(TE/TM) >50 nm, >50 nm   l=1550nm
Surface grating fiber coupler, Insertion loss(TE) ~5 dB Confirmed SMF, l=1545nm
110-nm half etch(GC-110) 1dB BW(TE) ~30 nm   Incident angle: 9°
SIWG-RIB transition Transfer loss (TE) < 0.1 dB Confirmed  
1x2 MMI coupler Insertion loss <4 dB Confirmed  
  Branching error <0.5 dB    
2x2 MMI coupler Insertion loss <4 dB Confirmed  
  Branching error <1 dB    
PIN injection MZI modulator Phase shifter length 500 um Confirmed Phase shifter length designable
  Insertion loss --    
  VpL ~0.01 V cm@~1V bias    
  EO BW ~230 MHz @~1V bias    
PN depletion MZI modulator Phase shifter length 2 mm Confirmed Phase shifter length designable
  Insertion loss 5~6 dB   Standard GSG TWE
  VpL 2.1~2.3 V cm    
  EO BW ~30 GHz@-2V bias    
TiN heater TiN sheet registance 26.5±0.1(1σ) Ω Confirmed  
TiN termination DC resistance ~50 Ω Confirmed Resistance designable
  S11@20GHz, 0V bias ~-25 dB   For standard GSG TWE
Waveguide bending 180-degree bending loss (TE/TM) 0.020/– dB (r=5mm) Confirmed  
    0.015/0.047 dB (r=10 mm)    
    0.007/0.024 dB (r=20 mm)    

P-cell GDS available