Last updated: 7/9/2021 15:00:00

エネルギー問題解決や高度情報化社会の実現には、半導体機器が省エネルギー性に優れ、高速に動作することが重要です。その中で、従来よりも高性能な半導体の素材として注目されるガリウム(Ga)系の窒化物を使った半導体技術の開発とその発展は、グリーンイノベーションの達成に大きな役割を担うと考えられています。

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  • July 9, 2021
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  • June 10, 2020
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  • June 4, 2019
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  • May 1, 2017
    新メンバーが加わりました。(名古屋大学、白石教授、宮崎教授)
  • April 11, 2017
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GaN-OIL ラボ長 宇治原 徹(名古屋大学未来材料・システム研究所 教授)
GaN-OIL 桂冠フェロー 天野 浩(名古屋大学未来材料・システム研究所 教授)
GaN-OIL 副ラボ長 阿澄 玲子(エレクトロニクス・製造領域 領域長補佐)
GaN-OIL ラボ研究主幹 山田 寿一
GaN-OIL 客員研究員 宮崎 誠一(名古屋大学大学院工学研究科 教授)
GaN-OIL ラボ付 高橋正和(中部センター産学官連携推進室 室長代理)
GaN-OIL テクニカルスタッフ 園田 勉
GaN-OIL テクニカルスタッフ 三浦 淑代
GaN-OIL 研究補助(派遣) 村井 明子

GaNパワーエレクトロニクスチーム

ラボチーム長 阿澄 玲子(兼:副ラボ長)
チーム付 清水 三聡(兼:電子光基礎技術研究部門 統括研究主幹)
チーム付 井手 利英(兼:電子光基礎技術研究部門 主任研究員)
チーム付 永瀬 成範(兼:電子光基礎技術研究部門 主任研究員)
チーム付 鍛冶 良作(兼:電子光基礎技術研究部門 主任研究員)
チーム付 山田 永(兼:電子光基礎技術研究部門 主任研究員)
リサーチアシスタント 土井 拓馬(名大D3)

GaN光デバイスチーム

ラボチーム長 王 学論
主任研究員 熊谷 直人
チーム付 榊田 創(兼:電子光基礎技術研究部門 研究グループ長)
チーム付 金 載浩(兼:電子光基礎技術研究部門 主任研究員)
チーム付 清水 鉄司(兼:電子光基礎技術研究部門 主任研究員)
招聘研究員 Nguyen HOANG

○窒化物半導体パワーエレクトロニクス技術の開発

市場の大きい家庭用の電気製品などの高効率化は、二酸化炭素の排出抑制にとても有効です。窒化物半導体パワーデバイスはこれらの製品に用いられているAC/DC変換器やDC/DC変換器などの高効率化や小型化を可能にする技術として注目されています。二次元電子ガスを用いたAlGaN/GaN HEMTは、高速スイッチングが可能であり、特に小型化などに効果があります。窒化物半導体パワーデバイスの高機能化・実用化に必要となるGaN結晶成長技術やデバイス構造の設計および製作技術、回路での動作実証などに取り組んでいきます。

○光デバイス技術の開発

窒化物半導体光デバイスの更なる用途拡大のためには、赤・近赤外および紫外への波長域の拡大や、高出力化・新機能化が重要です。当ラボラトリでは、独自原理による高指向性可視光LEDや準大気圧プラズマ源搭載MOCVDによる高In組成InGaN結晶成長技術の開発を行います。また、指向性LEDによるウェアラブル型情報端末用の超低消費電力ディスプレイや耐環境性ファイバー通信などへの応用に向けて、マイクロLEDの実装技術の開発にも取り組んでいきます。

論文リスト(国際誌)

[2021]

  • Y. Dang, C. Zhu, M. Ikumi, M. Takaishi, W. Yu, W. Huang, X. Liu, K. Kutsukake, S. Harada, M. Tagawa and T. Ujihara, “Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth”, CRYSTENGCOMM 23, 1982-1990 (2021).
  • W. Yu, C. Zhu, Y. Tsunooka, W. Huang, Y. Dang, K. Kutsukake, S. Harada, M. Tagawa and T. Ujihara, “Geometrical design of a crystal growth system guided by a machine learning algorithm”, CRYSTENGCOMM 23, 2695-2701 (2021).
  • T. Ide, R. Iida, T. Takeuchi, X. Wang, N. Takada and S. Shimiz, “Dynamic characteristics and device degradation of GaN-based vertical-cavity surface-emitting laser with an AlInN/GaN distributed Bragg reflector”, JAPANESE JOURNAL OF APPLIED PHYSICS 60, SBBE01 (2021).
  • H. Yamada, N. Kumagai, T. Yamada and T. Yamamoto, “Dielectric functions of CVD-grown boron nitride from 1.1 to 9.0 eV by spectroscopic ellipsometry”, APPLIED PHYSICS LETTERS 118, 112101 (2021).
  • N. Kumagai, X. Lu, Y. Minami, T. Kitada and T. Isu, “Mobility and activation energy of lateral photocurrent of InAs quantum dot layers with ultra-fast carrier relaxation”, Physica E: Low-dimensional Systems and Nanostructures 126, 114478 (2021).
  • N. Kokubo, Y. Tsunooka, S. Inotsume, F. Fujie, S. Onda, H. Yamada, M. Shimizu,S. Harada, M. Tagawa and T. Ujihara, “Analysis of Dislocations Line Tilts in GaN Single Crystal by Raman Spectroscop”, JAPANESE JOURNAL OF APPLIED PHYSICS 60, SAAD03 (2021).
  • M. Nagase, T. Takahasi and M. Shimizu, “Growth and Characterization of GaN-based Resonant Tunneling Diodes for High-Performance Nonvolatile Memory”, PHYSICA STATUS SOLIDI A 218, 202000495 (2021).
    

[2020]

  • S. Inotsume, N. Kokubo, H. Yamada, S. Onda, J. Kojima, J. Ohara, S. Harada, M. Tagawa and T. Ujihara, “Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer”, PHYSICA STATUS SOLIDI B 257, 1900527 (2020).
  • T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu and O. Nakatsuka, “Impact of byproducts formed on a 4H-SiC surface on interface state 1 density of Al2O3/4H-SiC(0001) gate stacks”, Appl. Phys. Lett. 116, 222104 (2020).
  • J. Kim, K. Takeda, H. Itagaki, X. Wang, S. Hirose, H. Ogiso, T. Shimizu, N. Kumagai, T. Tsutsumi, H. Kondo, M. Hori, H. Sakakita, “Measurements of nitrogen atom density in a microwave-excited plasma jet produced under moderate pressures”, IEEJ Transactions on Electrical and Electronic Engineering, 15(9), (2020).
  • K. Zhang, T. Takahashi, D. Ohori, G. Cong, K. Endo, N. Kumagai, S. Samukawa, M. Shimizu and X. Wang, “High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: Towards directional micro-LED in top-down structure”, SEMICONDUCTOR SCIENCE AND TECHNOLOGY 35, 075001 (2020).
  • H. Yamada, S. Inotsume, N. Kumagai, T. Yamada and M. Shimizu, “Comparative study of boron precursors for CVD-grown h-BN thin films”, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 218, 2000241 (2020).
  • F. Fujie, S. Harada, K. Hanada, H. Suo, H. Koizumi, T. Kato, M. Tagawa and T. Ujihara, “Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography”, ACTA MATERIALIA 194, 387-393 (2020).

[2019]

  • N. Kumagai, H. Itagaki, J. Kim, H. Ogiso, X. Wang, S. Hirose and H. Sakakita, “Effects of N2 and NH3 plasma exposure on the surface topography of p-GaN under quasi-atmospheric pressure”, Surfaces and Interfaces 14, 92-97 (2019).
  • N. Kumagai, T. Takahashi, H. Yamada, G. Cong, X. Wang and M. Shimizu, “Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs”, J. of Cryst. Growth 507, 437-441 (2019).
  • N. Taoka, T. Kubo, T. Yamada, T. Egawa and M. Shimizu, “Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces”, Semicond. Sci. Technol. 34 (2), 25009 (2019).
  • H. Yamada, H. Chonan, T. Yamada and M. Shimizu, “Reduction in residual impurities in semi-polar (3 0 (3)over-bar (1)over-bar) and (2 0 (2)over-bar (1)over-bar) GaN grown by metalorganic vapor phase epitaxy”, J. of Cryst. Growth 512, 119-123 (2019).
  • K. Fukuda, H. Asai, J. Hattori, M. Shimizu and T. Hashizume, “A time-dependent Verilog-A compact model for MOS capacitors with interface traps”, Jpn. J. of Appl. Phys. 58, SBBD06 (2019).
  • T. Doi, W. Takeuchi, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima, “Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment”, Jpn. J. of Appl. Phys. 58, SBBD05 (2019).
  • N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M. Shimizu, S. Harada, M. Tagawa and T. Ujihara, “Nondestructive visualization of threading dislocations in GaN by micro raman mapping”, Jpn. J. of Appl. Phys. 58, SCCB06 (2019).
  • N. Takada, N. Taoka, T. Yamamoto, A. Ohta, N. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu and S. Miyazaki, “Impact of remote plasma oxidation of a GaN surface on photoluminescence properties”, Jpn. J. of Appl. Phys. 58, SEEC02 (2019).
  • M. Nagase, T. Takahashi and M. Shimizu, “Switching characteristics of nonvolatile memory using GaN/AlN resonant tunneling diodes”, Jpn. J. of Appl. Phys. 58, 091001 (2019).
  • H. Yamada, S. Inotsume, N. Kumagai, T. Yamada and M. Shimizu, “Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3”, Physica Status Solidi B 257, 1900318 (2019).
  • H. Yamada, S. Inotsume, N. Kumagai, T. Yamada and M. Shimizu, “Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B2H6 and NH3”, Physica Status Solidi B 257, 1900521 (2019).
  • T. Ide, N. Imaoka, K. Ozaki, M. Shimizu and N. Takada, “NdxFe1-xNy Magnetic Core Application for Resonance Coil of 13.56 MHz GaN Wireless Power Transmission”, IEEE TRANSACTIONS ON MAGNETICS 55(10), 2801605.
  • J. Zhu, T. Takahashi, D. Ohori, K. Endo, S. Samukawa, M. Shimizu, and X. Wang, “Near-Complete Elimination of Size-Dependent Efficiency Decrease in GaN Micro-Light-Emitting Diodes”, Physica Status Solidi A 216 (22), 1900380 (2019).
  • Y. Minami, K. Ogusu, X. Lu, N. Kumagai, K. Morita and T. Kitada, “Time-resolved measurements of two-color laser light emitted from GaAs/AlGaAs-coupled multilayer cavity”, Jpn. J. of Appl. Phys. 58, SJJC03 (2019).
  • N. H. Trung, N. Taoka, H. Yamada, T. Takahashi, T. Yamada and M. Shimizu, “Experimental Demonstration of n- and p-channel GaN-MOSFETs toward Power IC Applications”, ECS Journal of Solid State Science and Technology 9, 015001 (2019).
  • N. H. Trung, H. Yamada, T. Yamada, T. Takahashi and M. Shimizu, “Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods”, Materials 13, 899 (2019).

[2018]

  • N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M. Shimizu, S. Harada, M. Tagawa and T. Ujihara, “Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping”, Appl. Phys. Express 11 (11), 111001 (2018).
  • N. Taoka, T. Yamada and M. Shimizu, “Impacts of Al2O3/GaN interface properties on the screening effect and carrier mobility in an inversion layer”, Jli>pn. J. of Appl. Phys. 58 (SA), SAAF03 (2018).
  • T. Yamamoto, N. Taoka, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, O. Nakatsuka and M. Shimizu, “Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma”, Jpn. J. of Appl. Phys. 57 (6S3), 06KA05 (2018).
  • M. Nagase, T. Takahashi and M. Shimizu, “Stabilization of Nonvolatile Memory Operation Using GaN/AlN Resonat Tunneling Diodes by Reducting Structural inhomogeneity”, Jpn. J. of Appl. Phys. 57 (7), 070310 (2018).
  • T. Yamamoto, N. Taoka, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu and S. Miyazaki, “Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties”, Jpn. J. of Appl. Phys. 57 (6S2), 06JE01 (2018).
  • N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, K. Hara, S. Onda, H. Yamada, M. Shimizu, S. Harada, M. Tagawa and T. Ujihara, “Detection of edge component of threading dislocations in GaN by Raman spectroscopy”, Appl. Phys. Express 11 (6), 061002 (2018).
  • N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu and S. Miyazaki, “Interface Properties of SiO2/GaN Structures Formed by Chemical Vapor Deposition with Remote Oxygen Plasma Mixed with Ar or He”, Jpn. J. of Appl. Phys. 57 (6S3), 06KA01 (2018).
  • H. Yamada, H. Chonan, T. Takahashi, T. Yamada and M. Shimizu, “Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates”, AIP Advances 8, 045311 (2018).
  • N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu and S. Miyazaki, “High Thermal Stability of Abrupt SiO2/GaN Interface with Low Interface Stagte Density”, Jpn. J. of Appl. Phys. 57, 04FG11 (2018).
  • X. Lu, N. Kumagai, Y. Minami and T. Kitada, “Sublattice reversal in GaAs/Ge/GaAs heterostructures grown on (113)B GaAs substrates”, Applied Physics Express 11 (1), 015501 (2018).
  • H. Yamada, H. Chonan, T. Takahashi and M. Shimizu, “Impact of Substrate off-angle on the m-plane GaN Schottky Diodes”, Jpn. J. of Appl. Phys. 57 (4S), 04FG01 (2018).
  • X. Wang, N. Kumagai and G. -D. Hao, “High-efficiency, high-power AlGaInP thin-film LEDs with micron-sized truncated cones as light-extraction structures”, Physica Status Solidi A 215, 1700562 (2018).
  • K. Nishio, T. Yayama, T. Miyazaki, N. Taoka and M. Shimizu, “Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface”, Scientific Reports 8, 1391 (2018).
  • T. Yamada, K. Watanabe, M. Nozaki, H. Yamada, T. Takahashi, M. Shimizu, A. Yoshigoe, T. Hosoi, T. Shimura and H. Watanabe, “Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability”, Applied Physics Express 11, 015701 (2018).
  • X. Shen, K. Kojima, M. Shimizu and H. Okumura, “Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth”, Cryst Eng Comm. 20(45), 7364-7370 (2018).
  • T. Kitada, X. Lu, Y. Minami, N. Kumagai and K. Morita, “Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding”, Jpn. J. of Appl. Phys. 57, 04FH03 (2018).
  • Y. Ota, D. Takamiya, R. Ohta, H. Takagi, N. Kumagai, S. Iwamoto and Y. Arakawa, “Large vacuum Rabi splitting between a single quantum dot and an H0 photonic crystal nanocavity”, Appl. Phys. Lett. 112, 093101 (2018).
  • X. Lu, N. Kumagai, Y. Minami and T. Kitada, “Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity”, Jpn. J. of Appl. Phys. 57, 04FH07 (2018).

[2017]

  • H. Robbins, K. Sumitomo, N. Tsujimura and T. Kamei, “Integrated thin film Si fluorescence sensor coupled with a GaN microLED for microfluidic point-of-care testing”, J. Micromech. Microeng. 28, 024001 (2017).
  • X. Shen, T. Takahashi, T. Ide and M. Shimizu, “Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition”, Jpn. J. of Appl. Phys. 57 (1), 010306 (2017) (Rapid communication).
  • T. Taoka, T. Kubo, T. Yamada, T. Egawa and M. Shimizu, “Impacts of Oxidants in Atomic Layer Deposition Method on Al2O3/GaN Interface Properties”, Jpn. J. of Appl. Phys. 57 (1S), 01AD04 (2017).
  • H. Yamada, H. Chonan, T. Takahashi and M. Shimizu, “Comparison of electrical properties of Ni/n-GaN Schottky Diodes on c-plane and m-plane GaN Substrates”, Physica Status Solidi A 215 (8), 1700362 (2017).
  • X. Lu, H. Ota, N. Kumagai, Y. Minami, T. Kitada and T. Isu, “Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources”, J. of Cryst. Growth 477, 249-252 (2017).
  • X. Lu, N. Kumagai, Y. Minami, T. Kitada and T. Isu, “Effects of Sb-soak on InAs quantum dots grown on (001) and (113)B GaAs substrates”, J. of Cryst. Growth 477, 221-224 (2017).
  • K. Fukuda, H. Asai, J. Hattori, M. Shimizu and T. Hashizume, “Transient-mode simulation of MOS C-V characteristics for GaN”, Ext. Abstr. 2017 Int. Conf. Solid State Devices Mater., 845-846 (2017).
  • K. Fukuda, J. Hattori, H. Asai, M. Shimizu and T. Hashizume, “Simulation of GaN MOS capacitance with frequency dispersion and hysteresis”, SISPAD, 2017.
  • K. Fukuda, H. Asai, J. Hattori, M. Shimizu and T. Hashizume, “A transient simulation approach to obtain capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps”, J. of Appl. Phys. 57 (4S), 04FG04.
  • N. Taoka, T. Kubo, T. Yamada, T. Egawa and M. Shimizu, "Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor", Microelectronic Engineering 178, 182-185 (2017).
  • C. Liu, X. Liu, Y. Xu, H. Sun, Y. Li, Y. Shi, M. V. Lee, T. Yamada, T. Hasegawa, Y. -Y. Noh and T. Minari, “Generating one-dimensional micro- or nano-structures with in-plane alignment by vapor-driven wetting kinetics”, Materials Horizons 4 (2), 259-267 (2017).
  • H. Yamada, H. Chonan, T. Takahashi and M. Shimizu, "Electrical properties of Ni/n-GaN Schottky Diodes on free-standing m-plane GaN Substrates", Appl. Phys. Express 10 (4), 1001 (2017).
  • X. Lu, H. Ota, N. Kumagai, T. Kitada and T. Isu, “GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices”, Jpn. J. of Appl. Phys. 56 (4S), 04CH02 (2017).
  • Y. Minami, H. Ota, X. Lu, N. Kumagai, T. Kitada and T. Isu, “Current-injection two-color lasing in a wafer-bonded coupled multilayer cavity with InGaAs multiple quantum wells”, Jpn. J. of Appl. Phys. 56 (4S), 04CH01 (2017).
  • T. Kitada, H. Ota, X. Lu, N. Kumagai and T. Isu, “Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources”, IEICE Transactions on Electronics E100-C, 171-178 (2017).
  • T. Ide, M. Shimizu, X. Shen, H. Ishida, M. Ishida, N. Otsuka and T. Ueda, “Recovery current characteristics of diode mode operation in GaN gate injection transistor bi‐directional switch”, Physica Status Solidi C 14 (8), 1720008 (2017).
  • N. Taoka, G. Capellini, V. Schlykow, M. Montanari, P. Zaumseil, O. Nakatsuka, S. Zaima and T. Schroeder, "Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration", Mater. Sci. in Semicond. Proc. 57, 48-53 (2017).
  • H. Minemawari, M.Tanaka, S.Tsuzuki, S.Inoue, T.Yamada, R.Kumai, Y.Shimoi and T.Hasegawa, "Enhanced Layered-Herringbone Packing due to Long Alkyl Chain Substitution in Solution-Processable Organic Semiconductors",Chem. Mater. 29 (3), 1245-1254 (2017).
  • K. Aoshima, S. Arai, K. Fukuhara, T. Yamada and T. Hasegawa, "Surface modification of printed silver electrodes for efficient carrier injection in organic thin-film transistors", Organic Electronics 41, 137-142 (2017).
  • S. Takashima, K. Ueno, H. Matsuyama1, T. Inamoto, M. Edo, T. Takahashi, M. Shimizu and K. Nakagawa, “Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers”, Applied Physics Express 10 (12), 121004 (2017).
  • M. Horita, S. Takashima, R. Tanaka, H. Matsuyama, K. Ueno, M. Edo, T. Takahashi, M. Shimizu and J. Suda, “Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations”, Jpn. J. of Appl. Phys. 56(3), 031001 (2017).
  • H. Takagi, Y. Ota, N. Kumagai, S. Ishida, S. Iwamoto and Y. Arakawa, “Enhanced optical Stark shifts in a single quantum dot embedded in an H1 photonic crystal nanocavity”, Applied Physics Express 10, 062002 (2017).

[2016]

  • T. Kitada, H. Ota, X. Lu, N. Kumagai and T. Isu, “Two-color surface-emitting lasers using a semiconductor coupled multilayer cavity”, Appl. Phys. Express 9, 111201 (2016).
  • X. Wang, G. Hao and N.Toda, “A novel directional light-emitting diode based on evanescent wave coupling”, Proc. of 43rd Int. Symp. on Compd. Semicond., (2016).
  • T.Yamada, K.Fukuhara, K.Matsuoka, H.Minemawari, J.Tsutsumi,N. Fukuda, K.Aoshima, S.Arai, Y.Makita, H.Kubo, T.Enomoto, T.Togashi, M.Kurihara and T.Hasegawa, "Nanoparticle chemisorption printing technique for conductive silver patterning with submicron resolution", Nat. Commun. 7, 11402 (2016).
  • H. Itagaki, S. Hirose, J. Kim, M. Ogura, X. Wang, A. Nonaka, H. Ogiso and H. Sakakita, “A low-power nitriding technique utilizing a microwave-excited radical flow”, Jpn. J. of Appl. Phys. 55 (6S2), 1-5 (2016).
  • T. Yamamoto, Y. Ota, S. Ishida, N. Kumagai, S. Iwamoto and Y. Arakawa, “Effect of metal side claddings on emission decay rates of single quantum dots embedded in a sub-wavelength semiconductor waveguide”, Jpn. J. of Appl. Phys. 55, 08RC02 (2016).
  • H. Minemawari, M. Tanaka, S. Tsuzuki, S. Inoue, T. Yamada, R. Kumai, Y. Shimoi and T. Hasegawa, “Effects of Substituted Alkyl Chain Length on Molecular Packing and Properties in Solution-Processable Organic Semiconductors”, PF Highlights, 14-15 (2016).

    論文リスト(和文誌)

        

    [2018]

  • 田岡 紀之, “絶縁膜/半導体界面制御と電気的特性”, 表面と真空 61 (6), 384-389 (2018).
  • [2017]

  • 福田 浩一, 浅井 栄大, 服部 淳一, 清水 三聡, 橋詰 保, “深いトラップを含むGaN MOSキャパシタ容量のシミュレーション”, 電子情報通信学会技術研究報告 117(290), 27-32 (2017).


国際会議 Proceedings

[2019]

  • K. Fukuda, J. Hattori, H. Asai, M. Shimizu and T. Hashizume, “Simulation of deep level transient spectroscopy using circuit simulator with deep level trap model implemented by Verilog-A language”, Proceedings of 2019 Int. Conf. on Simulation of Semiconductor Processes and Devices, 129-132.

[2018]

  • N. X. Truyen, N. Taoka, A. Ohta, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu and S. Miyazaki, “Carrier Conduction in SiO2/GaN Structure with Abrupt Interface”, Proceedings of the 2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA).

[2017]

  • K. Fukuda, J. Hattori, H. Asai, M. Shimizu and T. Hashizume, “Simulation of GaN MOS capacitance with frequency dispersion and hysteresis”, Proceedings of 2017 Int. Conf. on Simulation of Semiconductor Processes and Devices.

国際会議 Extended Abstract

[2019]

  • T. Maeda, H. Ishii, H.Ishii, W, Chang, T. Shimizu, S. Endo and H. Fujishiro, “SWIR InGaAs PhotoFETs on Half-inch Si Wafer Using Layer Transfer Technology”, Ext. Abstr. of the 2019 Int. Conf. on Solid State Devices and Materials, 63-64.
  • K. Fukuda, H. Asai, J. Hattori, M. Shimizu and T. Hashizume, “A Compact Model of MOS Capacitors Taking Deep Level Trap Effects into Account”, Ext. Abstr. of the 2019 Int. Conf. Solid State Devices Materials.
  • K. Kurahashi, Y. Goto, K. Goshima and M. Nagase, “Analysis of terahertz patch antenna using nitride semiconductors,” Ext. Abstr. of 2019 International Workshop on Green Energy System and Devices, GED-P-11.
  • S. Miura, K. Kurahashi, K. Goshima, T. Takahashi and M. Nagase, “Fabrication of GaN-based Schottky barrier diodes for terahertz receiver,” Ext. Abstr. of 2019 International Workshop on Green Energy System and Devices, GED-P-12.

[2017]

  • K. Fukuda, H. Asai, J. Hattori, M. Shimizu and T. Hashizume, “Transient-mode simulation of MOS C-V characteristics for GaN”, Ext. Abstr. 2017 Int. Conf. Solid State Devices Mater., 845-846 (2017).

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