The development of electric devices using GaN, a material of high performance that is attracting attention, is expected to contribute greatly to green innovation.
Gallium nitride (GaN) power devices and light-emitting devices represent key technology to achieve high-performance and high-efficiency use of energy.
Our aim is bridging the gap between academic research and industry, and promoting R&D on GaN and related compounds through all the stages from material science to their device applications.
Research subjects
Crystal Growth of III-Nitride Semiconductors and Power Device Applications
Development of high-frequency power supply and high-frequency communication technology utilizing the high-speed operation of GaN power devices is underway; high-speed operation of GaN power devices makes it possible to downsize power converters, which is expected to be applied to drones and IoT-related equipment. High-frequency devices using GaN are expected to be applied in post-5G. We are working on crystal growth technology for nitride semiconductors, process technologies of GaN devices including AlGaN/GaN HEMTs and GaN-MOSFETs, and downsizing technology for power converters by switching operation at MHz or higher.
Optical Device Applications
Wavelength extension to red/near infrared and ultraviolet spectral ranges and adding novel functionalities are indispensable for widespread use of nitride-semiconductor optical devices.
We are working on realizing highly directional micro-LEDs in the whole visible spectral range based on our unique directionality control technique, and the development of crystal growth techniques of red-emitting In-rich InGaN by means of an MOCVD system equipped with an in-house developed quasi-atmospheric pressure plasma source.
We also focus on developing advanced packaging technologies of micro-LEDs towards the application to head-mounted displays with high brightness, high resolution and low power consumption, which may be required for novel information devices such as “smart glasses” for virtual reality (VR)/augmented reality (AR) technologies.
Access
GaN Advanced Devices
Open Innovation Laboratory(GaN-OIL)
(AIST Chubu,
Nagoya University Cooperation Site）
Office
4th floor, Akasaki Institute
Furo-cho Chikusa-ku Nagoya,
464-8601
tel.
+81-52-736-7611
E-mail
info-gan-ml*aist.go.jp
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