We appreciate your support over the past 9 years.
AIST's research and development related to nitride semiconductors will continue
at the Core Electronics Technology Research Institute (AIST Tsukuba Center).
For any future inquiries regarding our lab, please contact the address below.
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The development of electric devices using GaN, a material of high performance that is attracting attention, is expected to contribute greatly to green innovation.
Gallium nitride (GaN) power devices and light-emitting devices represent key technology to achieve high-performance and high-efficiency use of energy.
Our aim is bridging the gap between academic research and industry, and promoting R&D on GaN and related compounds through all the stages from material science to their device applications.
Research subjects
Crystal Growth of III-Nitride Semiconductors and Power Device Applications
Development of high-frequency power supply and high-frequency communication technology utilizing the high-speed operation of GaN power devices is underway; high-speed operation of GaN power devices makes it possible to downsize power converters, which is expected to be applied to drones and IoT-related equipment. High-frequency devices using GaN are expected to be applied in post-5G. We are working on crystal growth technology for nitride semiconductors, process technologies of GaN devices including AlGaN/GaN HEMTs and GaN-MOSFETs, and downsizing technology for power converters by switching operation at MHz or higher.
Optical Device Applications
Wavelength extension to red/near infrared and ultraviolet spectral ranges and adding novel functionalities are indispensable for widespread use of nitride-semiconductor optical devices.
We are working on realizing highly directional micro-LEDs in the whole visible spectral range based on our unique directionality control technique, and the development of crystal growth techniques of red-emitting In-rich InGaN by means of an MOCVD system equipped with an in-house developed quasi-atmospheric pressure plasma source.
We also focus on developing advanced packaging technologies of micro-LEDs towards the application to head-mounted displays with high brightness, high resolution and low power consumption, which may be required for novel information devices such as “smart glasses” for virtual reality (VR)/augmented reality (AR) technologies.
Access
GaN Advanced Devices
Open Innovation Laboratory(GaN-OIL)
(AIST Chubu,
Nagoya University Cooperation Site）
Office
4th floor, Akasaki Institute
Furo-cho Chikusa-ku Nagoya,
464-8601
tel.
+81-52-736-7611
E-mail
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