発表論文 等

2019年

  • F.Sasaki et al., “Optically pumped lasing of cyano-substituted thiophene/phenylene co-oligomer microcrystals fabricated by the slide boat method“, Jpn.J.Appl.Phys. 58-SB, SBBG05 (2019).
  • N.Kumagai et al., “Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs“, J.Crystal Growth 507, 437 (2019).
  • N.Kumagai et al., “Effects of N2 and NH3 plasma exposure on the surface topography of p-GaN under quasi-atmospheric pressure“, Surfaces and Interfaces 14, 92 (2019).

2018年

  • R.Akimoto et al., “Vertically Coupled Suspended Silicon Nitride Microdisk Based Optical Sensor”, IEEE Photonics Technology Letters 30, 1507 (2018).
  • S.Zhai et al., “Vertically integrated waveguide self-coupled resonator based tunable optical filter”, Optics Letters 43, 3766 (2018).
  • Y.Higase et al., “High-gain and wide-band optical amplifications induced by a coupled excited state of organic dye molecules co-doped in polymer waveguide“, Optics Letters 43, 1714 (2018).
  • V.C.Nguyen et al., “Single-crystal perovskite CH 3 NH 3 PbBr 3 prepared by cast capping method for light-emitting diodes”, Jpn.J.Appl.Phys. 57, 04FL10 (2018).
  • K.Bando et al., “Self‐Assembled Organic Crystalline Microring Cavities with High Q‐Factors”, Chem.Nano Mater. 4 936 (2018).
  • D.Okada et al., “π-Electronic Co-crystal Microcavities with Selective Vibronic-Mode Light Amplification: Toward Forster Resonance Energy Transfer Lasing”, Nano Letters 18, 4396 (2018).
  • X.Wang et al., “High‐Efficiency, High‐Power AlGaInP Thin‐Film LEDs with Micron‐Sized Truncated Cones as Light‐Extraction Structures”, Phys.Status Solidi A, 1700562 (2018).
  • M.Nagase et al., “Stabilization of Nonvolatile Memory Operation Using GaN/AlN Resonant Tunneling Diodes by Reduction in Structural Inhomogeneity”, Jpn.J.Appl.Phys. 57, 070310 (2018).
  • N.Kurahashi et al., “Whispering gallery mode lasing in lead halide perovskite crystals grown in microcapillary”, Appl.Phys.Lett. 113, 011107 (2018).
  • S.Gozu et al., “Highly strained InAlP/InGaAs- based coupled double quantum wells on InP substrates”, Jpn.J.Appl.Phys. 57, 055501 (2018).
  • X.Shen et al., “Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition”, Jpn.J.Appl.Phys. 57, 010306 (2018).
  • R.Akimoto, “Recombination-Enhanced Effect in Green/Yellow Luminescence from BeZnCdSe Quantum Wells Grown by Molecular Beam Epitaxy”, J.Electron.Mater. (2018), https://doi.org/10.1007/s11664-018-6090-3.
  • V-C.Nguyen et al., “Single-crystal perovskite CH3NH3PbBr3 prepared by cast capping method for light-emitting diodes”, Jpn.J.Appl.Phys. 57, 04FL10 (2018).

2017年

  • S. Kushida, et al., "Low-Threshold Whispering Gallery Mode Lasing from Self-Assembled Microspheres of Single-Sort Conjugated Polymers," Adv. Optical Materials, 5 1700123/1 (May-2017).
  • F. Sasaki, et al., "Optically pumped lasing in solution-processed perovskite semiconducting materials: Self-assembled Fabry-Perot microcavity," JAP. J. Appl. Phys., 56, 4, 04CL07-1 (Mar-2017).

2016年

  • M. Nagase, et al., "Resistance switching memory operation using the bistability in current-voltage characteristics of GaN/AlN resonant tunneling diodes," JAP. J. Appl. Phys., 55, 10, 1003011 (Aug-2016).
  • J. V. Gonzalez-Fernandez, et al., "Residual electric fields of InGaAs/AlAs/AlAsSb (001) coupled double quantum wells structures assessed by photoreflectance anisotropy ," Int. J. Modern Phys. B, 30 1550248 (Jan-2016).
  • F. Sasaki et al., Jap. J. Appl. Phys. 54, 04ES02/1-5(2016).
  • S. Dokiya et al. Jap. J. Appl. Phys. 55, 03DC13/1-5 (2016).
  • H. Mochizuki et al., Jap. J. Appl. Phys. 55, 022101/1-5 (2016).
  • M. Nagase,“GaN-based resonant tunneling diodes and their application to THz sources,” Ext. Abstr. EMN Meeting on Terahertz, 2016, pp.95-96.

2015年

  • J. Feng, et al., "BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation," Appl. Phys. Lett., 107, 16, 161101-1 (Oct-2015).
  • X.-L. Wang, G.-D. Hao, and N. Toda, “Controlling the Directionality of Spontaneous Emission by Evanescent Wave Coupling”, Appl. Phys. Lett. 107, 131112-1-5 (2015).
  • 佐々木史雄他、レーザー学会第486回研究会報告「有機固体レーザー」,RTM-15,pp72/1-5 (2015).
  • F. Sasaki et al., Mol. Cryst. Liq. Cryst. 620, 153-158 (2015).
  • Y. Tanaka et al., Appl. Phys. Lett, 107, 163303/1-5 (2015).
  • M. Nagase, T. Takahashi, and M. Shimizu “Investigating the bistability characteristics of GaN/AlN resonant tunneling diodes for ultrafast nonvolatile memory,” Jpn. J. Appl. Phys., vol. 54, no.3, pp.0321011-0321018, 2015.

2014年

  • X.-L. Wang, G.-D. Hao, and T. Takahashi, “Enhancement of the Evanescent Wave Coupling Effect in a Sub-Wavelength-Sized GaAs/AlGaAs Ridge Structure by Low-Refractive-Index Surface Layers”, Optics Express, 22, No.S6, A1559-A1566 (2014).
  • G.-D. Hao, A. M. Jahir, T. Takahashi, M. Shimizu, X.-L. Wang, H. Kishi,Y. Hayashi, and K. Takeguchi, “Enhanced Light Extraction in GaN-based Light-Emitting Diodes by Evanescent Wave Coupling Effect”, Appl. Phys. Exp. 7, No.10, 102101 (2014).
  • M. Nagase and T. Tokizaki, “Bistability characteristics of GaN/AlN resonant tunneling diodes caused by intersubband transition and electron accumulation in quantum well,” IEEE Trans. Electron. Dev., vol. 61, no.5, pp.1321-1326, 2014.

2013年

  • G.-D. Hao and X.-L. Wang, “Enhancement of Light-extraction Efficiency in AlGaInP Light-emitting Diodes Using Evanescent Wave Coupling Effect”, Appl. Phys. Lett. 103, No.23, 231112 (2013).

保有知財

   

[産業財産権(特許権) 国内特許 出願]

  • 特願2015-216552 、板垣宏知、榊田創、金載浩、小倉睦郎、王学論、廣瀬伸吾、「マイクロ波プラズマ源による基材の窒化方法」、産業技術総合研究所、出願日:2015年11月4日
  • 特願2014-120298、竹口圭吾、林由紀子、岸寛之、王学論、清水三聡、「半導体発光ダイオードおよび発光ダイオードの製造方法」、旭化成株式会社・産業技術総合研究所、出願日:2014年6月11日
  • 特願2013-049079、王学論、「発光ダイオード」、産業技術総合研究所、出願日:2013年3月12日
   

[産業財産権(特許権) 国内特許 登録]

  • 特許第5495061号、王学論、「半導体発光ダイオード」、産業技術総合研究所、2014年3月14日(登録日)
  • 特許第5354622号、王学論、小倉睦郎、「半導体発光ダイオード」、産業技術総合研究所、2013年9月6日(登録日)

論文発表年

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 2019年
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