In order to solve the energy crisis and to create an advanced information society, it is crucial that semiconductor devices are energy-saving and operate at high speed. The development of electric devices using GaN, a material of high performance that is attracting attention, is expected to contribute greatly to green innovation.
GaN-OIL Laboratory Director, Dr. Toru UJIHARA (Professor, Institute of Materials and Systems for Sustainability, Nagoya University)
GaN-OIL Laureate AIST Fellow, Dr. Hiroshi AMANO (Professor, Institute of Materials and Systems for Sustainability, Nagoya University)
GaN-OIL Laboratory Deputy Director, Dr. Reiko AZUMI (Assistant Director General, AIST Department of Electronics and Manufacturing)
GaN-OIL Laboratory Research Manager, Dr. Toshikazu YAMADA
GaN-OIL Laboratory Visiting Researcher, Dr. Seiichi MIYAZAKI (Professor, Gradurate School of Engineering, Nagoya University)
GaN-OIL Administrative Employee, Mr. Masakazu TAKAHASHI (Administrative Employee, AIST Chubu Collaboration Affairs Office)
GaN-OIL Technical staff, Dr. Tsutomu SONODA
GaN-OIL Technical staff, Ms. Sumiyo MIURA
GaN-OIL Temporary staff, Ms. Akiko MURAI
Laboratory Team Leader, Dr. Hisashi YAMADA
Dr. Mitsuaki SHIMIZU (Principal Research Manager, Research Institute for Advanced Electronics and Photonics)
Dr. Toshihide IDE (Senior Researcher, Research Institute for Advanced Electronics and Photonics)
Dr. Ryosaku KAJI (Senior Researcher, Research Institute for Advanced Electronics andd Photonics)
Laboratory Team Leader, Dr. Wang Xuelun
Dr. Hajime SAKAKITA (Senior Planning Manager, General Affairs Headquarters Legal and Compliance Division Compliance Office)
Dr. Tetsuji SHIMIZU (Group Learder, Research Institute for Advanced Electronics and Photonics)
Dr. Naoto KUMAGAI (Senior Researcher, Research Institute for Advanced Electronics and Photonics)
Improving energy efficiency of consumer electronics is effective in reducing CO2 emissions. III nitride semiconductors and their power devices are fascinating as key technologies that enable high efficiency and downsizing of AC/DC, DC/DC converters, etc. which are used in these electronic devices. AlGaN/GaN HEMTs with two-dimensional electron gases (2DEG) have the characteristic of high-speed switching and are especially effective in miniaturizing devices. We are working on research projects on excellent GaN crystal growth, new-structure devices with new mechanisms, demonstration tests of our prototype devices and so on.
For further widespread applications of nitride-semiconductor optical devices, it is important to extend the device wavelength to the red near infrared and the ultraviolet spectral range and to add novel functionalities to conventional devices. In GaN-OIL, we will focus on the realization of highly directional LEDs in the whole visible spectral range based on a unique directionality control technique and the development of crystal growth techniques of In-rich InGaN by means of a MOCVD system equipped with a quasi atmospheric pressure plasma source. We will also focus on the development of advanced packing technologies of micro LEDs towards the application of directional LEDs to low power consumption displays for wearable electronics and harsh-environment optical communication systems.
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