Last updated: 9/26/2019 10:00:00

In order to solve the energy crisis and to create an advanced information society, it is crucial that semiconductor devices are energy-saving and operate at high speed. The development of electric devices using GaN, a material of high performance that is attracting attention, is expected to contribute greatly to green innovation.

For details

  • June 4, 2019
    Publication list is updated.
  • April 1, 2019
    There is a change of members.
  • April 1, 2018
    There is a change of members.
  • May 1, 2017
    New members have joined our laboratory. (Prof. Shiraishi and Prof. Miyazaki)
  • April 11, 2017
    This website has been renewed.

GaN-OIL Laboratory Director, Dr. Mitsuaki SHIMIZU
GaN-OIL Laureate AIST Fellow, Dr. Hiroshi AMANO (Professor, Institute of Materials and Systems for Sustainability, Nagoya University)
GaN-OIL Laboratory Deputy Director, Dr. Toru UJIHARA (Professor, Institute of Materials and Systems for Sustainability, Nagoya University)
GaN-OIL Laboratory Deputy Director, Mr. Kouji NISHIDA
GaN-OIL Laboratory Research Manager, Dr. Toshikazu YAMADA
GaN-OIL Laboratory Joint Research Fellow, Dr. Kenji SHIRAISHI (Professor, Institute of Materials and Systems for Sustainability, Nagoya University)
GaN-OIL Laboratory Visiting Researcher, Dr. Seiichi MIYAZAKI (Professor, Gradurate School of Engineering, Nagoya University)
GaN-OIL Technical staff, Mr. Hiroshi CHONAN
GaN-OIL Technical staff, Ms. Junko OHTA
GaN-OIL Temporary staff, Ms. Akiko MURAI

GaN Power Electronics Team

Laboratory Team Leader, Dr. Mitsuaki SHIMIZU (Laboratory Director)
Senior Researcher, Dr. Hisashi YAMADA
  Dr. Toshihide IDE (Senior Researcher, Electronics and Photonics Research Institute)
  Dr. Ryosaku KAJI (Senior Researcher, Intelligent Systems Research Institute)
AIST Postdoctral Researcher, Dr. Nguyen TRUNG
Technical staff, Ms. Sumiyo MIURA
Research assistant, Mr. Yousuke TSUNOKA (3rd yr. PhD student, Nagoya University)
Research assistant, Mr. Yuto ANDO (2nd yr. PhD student, Nagoya University)
Research assistant, Mr. Takuma DOI (1st yr. PhD student, Nagoya University)
Research assistant, Mr. Masashi INOTSUME (2nd yr. MS, Nagoya University)

GaN Optical Device Team

Laboratory Team Leader, Dr. Wang Xuelun
Senior Researcher, Dr. Naoto KUMAGAI
  Dr. Hajime SAKAKITA (Group Leader, Electronics and Photonics Research Institute)
  Dr. Toshihiro KAMEI (Chief Senior Researcher, Electronics and Photonics Research Institute)
  Dr. Jaeho KIM (Senior Researcher, Electronics and Photonics Research Institute)
  Dr. Masanori NAGASE (Senior Researcher, Electronics and Photonics Research Institute)
  Dr. Tetsuji SHIMIZU (Senior Researcher, Electronics and Photonics Research Institute)
AIST Postdoctral Researcher, Dr. Kexiong ZHANG

○Development of Technology for III Nitride Semiconductors and Power Devices

Improving energy efficiency of consumer electronics is effective in reducing CO2 emissions. III nitride semiconductors and their power devices are fascinating as key technologies that enable high efficiency and downsizing of AC/DC, DC/DC converters, etc. which are used in these electronic devices. AlGaN/GaN HEMTs with two-dimensional electron gases (2DEG) have the characteristic of high-speed switching and are especially effective in miniaturizing devices. We are working on research projects on excellent GaN crystal growth, new-structure devices with new mechanisms, demonstration tests of our prototype devices and so on.

○Development of Optical Device Technology

For further widespread applications of nitride-semiconductor optical devices, it is important to extend the device wavelength to the red near infrared and the ultraviolet spectral range and to add novel functionalities to conventional devices. In GaN-OIL, we will focus on the realization of highly directional LEDs in the whole visible spectral range based on a unique directionality control technique and the development of crystal growth techniques of In-rich InGaN by means of a MOCVD system equipped with a quasi atmospheric pressure plasma source. We will also focus on the development of advanced packing technologies of micro LEDs towards the application of directional LEDs to low power consumption displays for wearable electronics and harsh-environment optical communication systems.

[2019]

  • N. Kumagai, H. Itagaki, J. Kim, H. Ogiso, X. -L. Wang, S. Hirose and H. Sakakita, “Effects of N2 and NH3 plasma exposure on the surface topography of p-GaN under quasi-atmospheric pressure”, Surfaces and Interfaces 14, 92-97 (2019).
  • N. Kumagai, T. Takahashi, H. Yamada, G. Cong, X. -L. Wang and M. Shimizu, “Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs”, J. of Cryst. Growth 507, 437-441 (2019).
  • N. Taoka, T. Kubo, T. Yamada, T. Egawa and M. Shimizu, “Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces”, Semicond. Sci. Technol. 34 (2), 25009 (2019).

[2018]

  • N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M. Shimizu, S. Harada, M. Tagawa and T. Ujihara, “Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping”, Appl. Phys. Express 11 (11), 111001 (2018).
  • N. Taoka, T. Yamada and M. Shimizu, “Impacts of Al2O3/GaN interface properties on the screening effect and carrier mobility in an inversion layer”, Jpn. J. of Appl. Phys. 58 (SA), SAAF03 (2018).
  • T. Yamamoto, N. Taoka, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, O. Nakatsuka and M. Shimizu, “Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma”, Jpn. J. of Appl. Phys. 57 (6S3), 06KA05 (2018).
  • M. Nagase, T. Takahashi and M. Shimizu, “Stabilization of Nonvolatile Memory Operation Using GaN/AlN Resonat Tunneling Diodes by Reducting Structural inhomogeneity”, Jpn. J. of Appl. Phys. 57 (7), 070310 (2018).
  • T. Yamamoto, N. Taoka, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu and S. Miyazaki, “Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties”, Jpn. J. of Appl. Phys. 57 (6S2), 06JE01 (2018).
  • N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, K. Hara, S. Onda, H. Yamada, M. Shimizu, S. Harada, M. Tagawa and T. Ujihara, “Detection of edge component of threading dislocations in GaN by Raman spectroscopy”, Appl. Phys. Express 11 (6), 061002 (2018).
  • N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu and S. Miyazaki, “Interface Properties of SiO2/GaN Structures Formed by Chemical Vapor Deposition with Remote Oxygen Plasma Mixed with Ar or He”, Jpn. J. of Appl. Phys. 57 (6S3), 06KA01 (2018).
  • H. Yamada, H. Chonan, T. Takahashi, T. Yamada and M. Shimizu, “Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates”, AIP Advances 8, 045311 (2018).
  • N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu and S. Miyazaki, “High Thermal Stability of Abrupt SiO2/GaN Interface with Low Interface Stagte Density”, Jpn. J. of Appl. Phys. 57, 04FG11 (2018).
  • X. Lu, N. Kumagai, Y. Minami and T. Kitada, “Sublattice reversal in GaAs/Ge/GaAs heterostructures grown on (113)B GaAs substrates”, Applied Physics Express 11 (1), 015501 (2018).
  • H. Yamada, H. Chonan, T. Takahashi and M. Shimizu, “Impact of Substrate off-angle on the m-plane GaN Schottky Diodes”, Jpn. J. of Appl. Phys. 57 (4S), 04FG01 (2018).
  • X. -L. Wang, N. Kumagai and G. -D. Hao, “High-efficiency, high-power AlGaInP thin-film LEDs with micron-sized truncated cones as light-extraction structures”, Physica Status Solidi A 215, 1700562 (2018).
  • K. Nishio, T. Yayama, T. Miyazaki, N. Taoka and M. Shimizu, “Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface”, Scientific Reports 8, 1391 (2018).

[2017]

  • H. Robbins, K. Sumitomo, N. Tsujimura and T. Kamei, “Integrated thin film Si fluorescence sensor coupled with a GaN microLED for microfluidic point-of-care testing”, J. Micromech. Microeng. 28, 024001 (2017).
  • X. -Q. Shen, T. Takahashi, T. Ide and M. Shimizu, “Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition”, Jpn. J. of Appl. Phys. 57 (1), 010306 (2017) (Rapid communication).
  • T. Taoka, T. Kubo, T. Yamada, T. Egawa and M. Shimizu, “Impacts of Oxidants in Atomic Layer Deposition Method on Al2O3/GaN Interface Properties”, Jpn. J. of Appl. Phys. 57 (1S), 01AD04 (2017).
  • H. Yamada, H. Chonan, T. Takahashi and M. Shimizu, “Comparison of electrical properties of Ni/n-GaN Schottky Diodes on c-plane and m-plane GaN Substrates”, Physica Status Solidi A 215 (8), 1700362 (2017).
  • X. Lu, H. Ota, N. Kumagai, Y. Minami, T. Kitada and T. Isu, “Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources”, J. of Cryst. Growth 477, 249-252 (2017).
  • X. Lu, N. Kumagai, Y. Minami, T. Kitada and T. Isu, “Effects of Sb-soak on InAs quantum dots grown on (001) and (113)B GaAs substrates”, J. of Cryst. Growth 477, 221-224 (2017).
  • H. Minemawari, M. Tanaka, S. Tsuzuki, S. Inoue, T. Yamada, R. Kumai, Y. Shimoi and T. Hasegawa, “Effects of Substituted Alkyl Chain Length on Molecular Packing and Properties in Solution-Processable Organic Semiconductors”, PF Highlights, 14-15 (2016).
  • K. Fukuda, H. Asai, J. Hattori, M. Shimizu and T. Hashizume, “Transient-mode simulation of MOS C-V characteristics for GaN”, Ext. Abstr. 2017 Int. Conf. Solid State Devices Mater., 845-846 (2017).
  • K. Fukuda, J. Hattori, H. Asai, M. Shimizu and T. Hashizume, “Simulation of GaN MOS capacitance with frequency dispersion and hysteresis”, SISPAD, 2017.
  • K. Fukuda, H. Asai, J. Hattori, M. Shimizu and T. Hashizume, “A transient simulation approach to obtain capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps”, J. of Appl. Phys. 57 (4S), 04FG04.
  • N. Taoka, T. Kubo, T. Yamada, T. Egawa and M. Shimizu, "Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor", Microelectronic Engineering 178, 182-185 (2017).
  • C. Liu, X. Liu, Y. Xu, H. Sun, Y. Li, Y. Shi, M. V. Lee, T. Yamada, T. Hasegawa, Y. -Y. Noh and T. Minari, “Generating one-dimensional micro- or nano-structures with in-plane alignment by vapor-driven wetting kinetics”, Materials Horizons 4 (2), 259-267 (2017).
  • H. Yamada, H. Chonan, T. Takahashi and M. Shimizu, "Electrical properties of Ni/n-GaN Schottky Diodes on free-standing m-plane GaN Substrates", Appl. Phys. Express 10 (4), 1001 (2017).
  • X. Lu, H. Ota, N. Kumagai, T. Kitada and T. Isu, “GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices”, Jpn. J. of Appl. Phys. 56 (4S), 04CH02 (2017).
  • Y. Minami, H. Ota, X. Lu, N. Kumagai, T. Kitada and T. Isu, “Current-injection two-color lasing in a wafer-bonded coupled multilayer cavity with InGaAs multiple quantum wells”, Jpn. J. of Appl. Phys. 56 (4S), 04CH01 (2017).
  • T. Kitada, H. Ota, X. Lu, N. Kumagai and T. Isu, “Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources”, IEICE Transactions on Electronics E100-C, 171-178 (2017).
  • T. Ide, M. Shimizu, X. -Q. Shen, H. Ishida, M. Ishida, N. Otsuka and T. Ueda, “Recovery current characteristics of diode mode operation in GaN gate injection transistor bi‐directional switch”, Physica Status Solidi C 14 (8), 1720008 (2017).
  • N. Taoka, G. Capellini, V. Schlykow, M. Montanari, P. Zaumseil, O. Nakatsuka, S. Zaima and T. Schroeder, "Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration", Mater. Sci. in Semicond. Proc. 57, 48-53 (2017).

Collaborated Research

  • H.Minemawari, M.Tanaka, S.Tsuzuki, S.Inoue, T.Yamada, R.Kumai, Y.Shimoi and T.Hasegawa, "Enhanced Layered-Herringbone Packing due to Long Alkyl Chain Substitution in Solution-Processable Organic Semiconductors",Chem. Mater. 29 (3), 1245-1254 (2017).
  • K. Aoshima, S. Arai, K. Fukuhara, T. Yamada and T. Hasegawa, "Surface modification of printed silver electrodes for efficient carrier injection in organic thin-film transistors", Organic Electronics 41, 137-142 (2017).

[2016]

  • T. Kitada, H. Ota, X. Lu, N. Kumagai and T. Isu, “Two-color surface-emitting lasers using a semiconductor coupled multilayer cavity”, Appl. Phys. Express 9, 111201 (2016).
  • X. -L. Wang, G. -D. Hao and N.Toda, “A novel directional light-emitting diode based on evanescent wave coupling”, Proc. of 43rd Int. Symp. on Compd. Semicond., (2016).
  • T.Yamada, K.Fukuhara, K.Matsuoka, H.Minemawari, J.Tsutsumi,N. Fukuda, K.Aoshima, S.Arai, Y.Makita, H.Kubo, T.Enomoto, T.Togashi, M.Kurihara and T.Hasegawa, "Nanoparticle chemisorption printing technique for conductive silver patterning with submicron resolution", Nat. Commun. 7, 11402 (2016).

Collaborated Research

Nagoya University, Higashiyama Campus

Office 4th floor, Akasaki Institute
Furo-cho Chikusa-ku Nagoya, 464-8601

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