Last updated: 6/10/2020 17:00:00

In order to solve the energy crisis and to create an advanced information society, it is crucial that semiconductor devices are energy-saving and operate at high speed. The development of electric devices using GaN, a material of high performance that is attracting attention, is expected to contribute greatly to green innovation.

For details

  • June 10, 2020
    Publication list is updated.
  • April 1, 2020
    There is a change of members.
  • June 4, 2019
    Publication list is updated.
  • April 1, 2019
    There is a change of members.
  • April 1, 2018
    There is a change of members.
  • May 1, 2017
    New members have joined our laboratory. (Prof. Shiraishi and Prof. Miyazaki)
  • April 11, 2017
    This website has been renewed.

GaN-OIL Laboratory Director, Dr. Mitsuaki SHIMIZU
GaN-OIL Laureate AIST Fellow, Dr. Hiroshi AMANO (Professor, Institute of Materials and Systems for Sustainability, Nagoya University)
GaN-OIL Laboratory Deputy Director, Dr. Toru UJIHARA (Professor, Institute of Materials and Systems for Sustainability, Nagoya University)
GaN-OIL Laboratory Deputy Director, Mr. Kouji NISHIDA
GaN-OIL Laboratory Research Manager, Dr. Toshikazu YAMADA
GaN-OIL Laboratory Joint Research Fellow, Dr. Kenji SHIRAISHI (Professor, Institute of Materials and Systems for Sustainability, Nagoya University)
GaN-OIL Laboratory Visiting Researcher, Dr. Seiichi MIYAZAKI (Professor, Gradurate School of Engineering, Nagoya University)
GaN-OIL Technical staff, Mr. Hiroshi CHONAN
GaN-OIL Technical staff, Dr. Tsutomu SONODA
GaN-OIL Temporary staff, Ms. Akiko MURAI

GaN Power Electronics Team

Laboratory Team Leader, Dr. Mitsuaki SHIMIZU (Laboratory Director)
Senior Researcher, Dr. Hisashi YAMADA
  Dr. Toshihide IDE (Senior Researcher, Research Institute for Advanced Electronics and Photonics)
  Dr. Masanori NAGASE (Senior Researcher, Research Institute for Advanced Electronics and Photonics)
  Dr. Ryosaku KAJI (Senior Researcher, Research Institute for Advanced Electronics andd Photonics)
AIST Postdoctral Researcher, Dr. Nguyen TRUNG
Technical staff, Ms. Sumiyo MIURA
Research assistant, Mr. Yuto ANDO (3rd yr. PhD student, Nagoya University)

GaN Optical Device Team

Laboratory Team Leader, Dr. Wang Xuelun
Senior Researcher, Dr. Naoto KUMAGAI
  Dr. Jaeho KIM (Senior Researcher, Research Institute for Advanced Electronics and Photonics)
  Dr. Tetsuji SHIMIZU (Senior Researcher, Research Institute for Advanced Electronics and Photonics)
Invited Senior Researcher, Dr. Nguyen HOANG

○Development of Technology for III Nitride Semiconductors and Power Devices

Improving energy efficiency of consumer electronics is effective in reducing CO2 emissions. III nitride semiconductors and their power devices are fascinating as key technologies that enable high efficiency and downsizing of AC/DC, DC/DC converters, etc. which are used in these electronic devices. AlGaN/GaN HEMTs with two-dimensional electron gases (2DEG) have the characteristic of high-speed switching and are especially effective in miniaturizing devices. We are working on research projects on excellent GaN crystal growth, new-structure devices with new mechanisms, demonstration tests of our prototype devices and so on.

○Development of Optical Device Technology

For further widespread applications of nitride-semiconductor optical devices, it is important to extend the device wavelength to the red near infrared and the ultraviolet spectral range and to add novel functionalities to conventional devices. In GaN-OIL, we will focus on the realization of highly directional LEDs in the whole visible spectral range based on a unique directionality control technique and the development of crystal growth techniques of In-rich InGaN by means of a MOCVD system equipped with a quasi atmospheric pressure plasma source. We will also focus on the development of advanced packing technologies of micro LEDs towards the application of directional LEDs to low power consumption displays for wearable electronics and harsh-environment optical communication systems.

[2020]

  • S. Inotsume, N. Kokubo, H. Yamada, S. Onda, J. Kojima, J. Ohara, S. Harada, M. Tagawa and T. Ujihara, “Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer”, PHYSICA STATUS SOLIDI B 257, 1900527 (2020).
  • T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu and O. Nakatsuka, “Impact of byproducts formed on a 4H-SiC surface on interface state 1 density of Al2O3/4H-SiC(0001) gate stacks”, Appl. Phys. Lett. 116, 222104 (2020).
  • J. Kim, K. Takeda, H. Itagaki, X. Wang, S. Hirose, H. Ogiso, T. Shimizu, N. Kumagai, T. Tsutsumi, H. Kondo, M. Hori, H. Sakakita, “Measurements of nitrogen atom density in a microwave-excited plasma jet produced under moderate pressures”, IEEJ Transactions on Electrical and Electronic Engineering, in press 15(9), (2020).
  • K. Zhang, T. Takahashi, D. Ohori, G. Cong, K. Endo, N. Kumagai, S. Samukawa, M. Shimizu and X. Wang, “High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: Towards directional micro-LED in top-down structure”, Semicond. Sci. Tech. 35,075001 (2020).

[2019]

  • N. Kumagai, H. Itagaki, J. Kim, H. Ogiso, X. Wang, S. Hirose and H. Sakakita, “Effects of N2 and NH3 plasma exposure on the surface topography of p-GaN under quasi-atmospheric pressure”, Surfaces and Interfaces 14, 92-97 (2019).
  • N. Kumagai, T. Takahashi, H. Yamada, G. Cong, X. Wang and M. Shimizu, “Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs”, J. of Cryst. Growth 507, 437-441 (2019).
  • N. Taoka, T. Kubo, T. Yamada, T. Egawa and M. Shimizu, “Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces”, Semicond. Sci. Technol. 34 (2), 25009 (2019).
  • H. Yamada, H. Chonan, T. Yamada and M. Shimizu, “Reduction in residual impurities in semi-polar (3 0 (3)over-bar (1)over-bar) and (2 0 (2)over-bar (1)over-bar) GaN grown by metalorganic vapor phase epitaxy”, J. of Cryst. Growth 512, 119-123 (2019).
  • K. Fukuda, H. Asai, J. Hattori, M. Shimizu and T. Hashizume, “A time-dependent Verilog-A compact model for MOS capacitors with interface traps”, Jpn. J. of Appl. Phys. 58, SBBD06 (2019).
  • T. Doi, W. Takeuchi, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima, “Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment”, Jpn. J. of Appl. Phys. 58, SBBD05 (2019).
  • N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M. Shimizu, S. Harada, M. Tagawa and T. Ujihara, “Nondestructive visualization of threading dislocations in GaN by micro raman mapping”, Jpn. J. of Appl. Phys. 58, SCCB06 (2019).
  • N. Takada, N. Taoka, T. Yamamoto, A. Ohta, N. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu and S. Miyazaki, “Impact of remote plasma oxidation of a GaN surface on photoluminescence properties”, Jpn. J. of Appl. Phys. 58, SEEC02 (2019).
  • M. Nagase, T. Takahashi and M. Shimizu, “Switching characteristics of nonvolatile memory using GaN/AlN resonant tunneling diodes”, Jpn. J. of Appl. Phys. 58, 091001 (2019).
  • H. Yamada, S. Inotsume, N. Kumagai, T. Yamada and M. Shimizu, “Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3”, Physica Status Solidi B 257, 1900318 (2019).
  • H. Yamada, S. Inotsume, N. Kumagai, T. Yamada and M. Shimizu, “Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B2H6 and NH3”, Physica Status Solidi B 257, 1900521 (2019).
  • T. Ide, N. Imaoka, K. Ozaki, M. Shimizu and N. Takada, “NdxFe1-xNy Magnetic Core Application for Resonance Coil of 13.56 MHz GaN Wireless Power Transmission”, IEEE TRANSACTIONS ON MAGNETICS 55(10), 2801605.
  • J. Zhu, T. Takahashi, D. Ohori, K. Endo, S. Samukawa, M. Shimizu, and X. Wang, “Near-Complete Elimination of Size-Dependent Efficiency Decrease in GaN Micro-Light-Emitting Diodes”, Physica Status Solidi A 216 (22), 1900380 (2019).
  • Y. Minami, K. Ogusu, X. Lu, N. Kumagai, K. Morita and T. Kitada, “Time-resolved measurements of two-color laser light emitted from GaAs/AlGaAs-coupled multilayer cavity”, Jpn. J. of Appl. Phys. 58, SJJC03 (2019).
  • N. H. Trung, N. Taoka, H. Yamada, T. Takahashi, T. Yamada and M. Shimizu, “Experimental Demonstration of n- and p-channel GaN-MOSFETs toward Power IC Applications”, ECS Journal of Solid State Science and Technology 9, 015001 (2019).
  • N. H. Trung, H. Yamada, T. Yamada, T. Takahashi and M. Shimizu, “Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods”, Materials 13, 899 (2019).
  • K. Fukuda, J. Hattori, H. Asai, M. Shimizu and T. Hashizume, “Simulation of deep level transient spectroscopy using circuit simulator with deep level trap model implemented by Verilog-A language”, Proceedings of 2019 Int. Conf. on Simulation of Semiconductor Processes and Devices, 129-132.
  • T. Maeda, H. Ishii, H.Ishii, W, Chang, T. Shimizu, S. Endo and H. Fujishiro, “SWIR InGaAs PhotoFETs on Half-inch Si Wafer Using Layer Transfer Technology”, Ext. Abstr. of the 2019 Int. Conf. on Solid State Devices and Materials, 63-64.
  • K. Fukuda, H. Asai, J. Hattori, M. Shimizu and T. Hashizume, “A Compact Model of MOS Capacitors Taking Deep Level Trap Effects into Account”, Ext. Abstr. of the 2019 Int. Conf. Solid State Devices Materials.
  • K. Kurahashi, Y. Goto, K. Goshima and M. Nagase, “Analysis of terahertz patch antenna using nitride semiconductors,” Ext. Abstr. of 2019 International Workshop on Green Energy System and Devices, GED-P-11.
  • S. Miura, K. Kurahashi, K. Goshima, T. Takahashi and M. Nagase, “Fabrication of GaN-based Schottky barrier diodes for terahertz receiver,” Ext. Abstr. of 2019 International Workshop on Green Energy System and Devices, GED-P-12.

[2018]

  • N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M. Shimizu, S. Harada, M. Tagawa and T. Ujihara, “Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping”, Appl. Phys. Express 11 (11), 111001 (2018).
  • N. Taoka, T. Yamada and M. Shimizu, “Impacts of Al2O3/GaN interface properties on the screening effect and carrier mobility in an inversion layer”, Jpn. J. of Appl. Phys. 58 (SA), SAAF03 (2018).
  • T. Yamamoto, N. Taoka, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, O. Nakatsuka and M. Shimizu, “Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma”, Jpn. J. of Appl. Phys. 57 (6S3), 06KA05 (2018).
  • M. Nagase, T. Takahashi and M. Shimizu, “Stabilization of Nonvolatile Memory Operation Using GaN/AlN Resonat Tunneling Diodes by Reducting Structural inhomogeneity”, Jpn. J. of Appl. Phys. 57 (7), 070310 (2018).
  • T. Yamamoto, N. Taoka, A. Ohta, N. X. Truyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu and S. Miyazaki, “Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties”, Jpn. J. of Appl. Phys. 57 (6S2), 06JE01 (2018).
  • N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, K. Hara, S. Onda, H. Yamada, M. Shimizu, S. Harada, M. Tagawa and T. Ujihara, “Detection of edge component of threading dislocations in GaN by Raman spectroscopy”, Appl. Phys. Express 11 (6), 061002 (2018).
  • N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu and S. Miyazaki, “Interface Properties of SiO2/GaN Structures Formed by Chemical Vapor Deposition with Remote Oxygen Plasma Mixed with Ar or He”, Jpn. J. of Appl. Phys. 57 (6S3), 06KA01 (2018).
  • H. Yamada, H. Chonan, T. Takahashi, T. Yamada and M. Shimizu, “Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates”, AIP Advances 8, 045311 (2018).
  • N. X. Truyen, N. Taoka, A. Ohta, K. Makihara, H. Yamada, T. Takahashi, M. Ikeda, M. Shimizu and S. Miyazaki, “High Thermal Stability of Abrupt SiO2/GaN Interface with Low Interface Stagte Density”, Jpn. J. of Appl. Phys. 57, 04FG11 (2018).
  • X. Lu, N. Kumagai, Y. Minami and T. Kitada, “Sublattice reversal in GaAs/Ge/GaAs heterostructures grown on (113)B GaAs substrates”, Applied Physics Express 11 (1), 015501 (2018).
  • H. Yamada, H. Chonan, T. Takahashi and M. Shimizu, “Impact of Substrate off-angle on the m-plane GaN Schottky Diodes”, Jpn. J. of Appl. Phys. 57 (4S), 04FG01 (2018).
  • X. Wang, N. Kumagai and G. -D. Hao, “High-efficiency, high-power AlGaInP thin-film LEDs with micron-sized truncated cones as light-extraction structures”, Physica Status Solidi A 215, 1700562 (2018).
  • K. Nishio, T. Yayama, T. Miyazaki, N. Taoka and M. Shimizu, “Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface”, Scientific Reports 8, 1391 (2018).
  • T. Yamada, K. Watanabe, M. Nozaki, H. Yamada, T. Takahashi, M. Shimizu, A. Yoshigoe, T. Hosoi, T. Shimura and H. Watanabe, “Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability”, Applied Physics Express 11, 015701 (2018).
  • X. Shen, K. Kojima, M. Shimizu and H. Okumura, “Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth”, Cryst Eng Comm. 20(45), 7364-7370 (2018).
  • T. Kitada, X. Lu, Y. Minami, N. Kumagai and K. Morita, “Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding”, Jpn. J. of Appl. Phys. 57, 04FH03 (2018).
  • Y. Ota, D. Takamiya, R. Ohta, H. Takagi, N. Kumagai, S. Iwamoto and Y. Arakawa, “Large vacuum Rabi splitting between a single quantum dot and an H0 photonic crystal nanocavity”, Appl. Phys. Lett. 112, 093101 (2018).
  • X. Lu, N. Kumagai, Y. Minami and T. Kitada, “Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity”, Jpn. J. of Appl. Phys. 57, 04FH07 (2018).
  • 田岡 紀之, “絶縁膜/半導体界面制御と電気的特性”, 表面と真空 61 (6), 384-389 (2018).
  • N. X. Truyen, N. Taoka, A. Ohta, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, M. Shimizu and S. Miyazaki, “Carrier Conduction in SiO2/GaN Structure with Abrupt Interface”, Proceedings of the 2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA).

[2017]

  • H. Robbins, K. Sumitomo, N. Tsujimura and T. Kamei, “Integrated thin film Si fluorescence sensor coupled with a GaN microLED for microfluidic point-of-care testing”, J. Micromech. Microeng. 28, 024001 (2017).
  • X. Shen, T. Takahashi, T. Ide and M. Shimizu, “Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition”, Jpn. J. of Appl. Phys. 57 (1), 010306 (2017) (Rapid communication).
  • T. Taoka, T. Kubo, T. Yamada, T. Egawa and M. Shimizu, “Impacts of Oxidants in Atomic Layer Deposition Method on Al2O3/GaN Interface Properties”, Jpn. J. of Appl. Phys. 57 (1S), 01AD04 (2017).
  • H. Yamada, H. Chonan, T. Takahashi and M. Shimizu, “Comparison of electrical properties of Ni/n-GaN Schottky Diodes on c-plane and m-plane GaN Substrates”, Physica Status Solidi A 215 (8), 1700362 (2017).
  • X. Lu, H. Ota, N. Kumagai, Y. Minami, T. Kitada and T. Isu, “Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources”, J. of Cryst. Growth 477, 249-252 (2017).
  • X. Lu, N. Kumagai, Y. Minami, T. Kitada and T. Isu, “Effects of Sb-soak on InAs quantum dots grown on (001) and (113)B GaAs substrates”, J. of Cryst. Growth 477, 221-224 (2017).
  • K. Fukuda, J. Hattori, H. Asai, M. Shimizu and T. Hashizume, “Simulation of GaN MOS capacitance with frequency dispersion and hysteresis”, SISPAD, 2017.
  • K. Fukuda, H. Asai, J. Hattori, M. Shimizu and T. Hashizume, “A transient simulation approach to obtain capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps”, J. of Appl. Phys. 57 (4S), 04FG04.
  • N. Taoka, T. Kubo, T. Yamada, T. Egawa and M. Shimizu, "Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor", Microelectronic Engineering 178, 182-185 (2017).
  • C. Liu, X. Liu, Y. Xu, H. Sun, Y. Li, Y. Shi, M. V. Lee, T. Yamada, T. Hasegawa, Y. -Y. Noh and T. Minari, “Generating one-dimensional micro- or nano-structures with in-plane alignment by vapor-driven wetting kinetics”, Materials Horizons 4 (2), 259-267 (2017).
  • H. Yamada, H. Chonan, T. Takahashi and M. Shimizu, "Electrical properties of Ni/n-GaN Schottky Diodes on free-standing m-plane GaN Substrates", Appl. Phys. Express 10 (4), 1001 (2017).
  • X. Lu, H. Ota, N. Kumagai, T. Kitada and T. Isu, “GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices”, Jpn. J. of Appl. Phys. 56 (4S), 04CH02 (2017).
  • Y. Minami, H. Ota, X. Lu, N. Kumagai, T. Kitada and T. Isu, “Current-injection two-color lasing in a wafer-bonded coupled multilayer cavity with InGaAs multiple quantum wells”, Jpn. J. of Appl. Phys. 56 (4S), 04CH01 (2017).
  • T. Kitada, H. Ota, X. Lu, N. Kumagai and T. Isu, “Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources”, IEICE Transactions on Electronics E100-C, 171-178 (2017).
  • T. Ide, M. Shimizu, X. Shen, H. Ishida, M. Ishida, N. Otsuka and T. Ueda, “Recovery current characteristics of diode mode operation in GaN gate injection transistor bi‐directional switch”, Physica Status Solidi C 14 (8), 1720008 (2017).
  • N. Taoka, G. Capellini, V. Schlykow, M. Montanari, P. Zaumseil, O. Nakatsuka, S. Zaima and T. Schroeder, "Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration", Mater. Sci. in Semicond. Proc. 57, 48-53 (2017).
  • H. Minemawari, M.Tanaka, S.Tsuzuki, S.Inoue, T.Yamada, R.Kumai, Y.Shimoi and T.Hasegawa, "Enhanced Layered-Herringbone Packing due to Long Alkyl Chain Substitution in Solution-Processable Organic Semiconductors",Chem. Mater. 29 (3), 1245-1254 (2017).
  • K. Aoshima, S. Arai, K. Fukuhara, T. Yamada and T. Hasegawa, "Surface modification of printed silver electrodes for efficient carrier injection in organic thin-film transistors", Organic Electronics 41, 137-142 (2017).
  • S. Takashima, K. Ueno, H. Matsuyama1, T. Inamoto, M. Edo, T. Takahashi, M. Shimizu and K. Nakagawa, “Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers”, Applied Physics Express 10 (12), 121004 (2017).
  • M. Horita, S. Takashima, R. Tanaka, H. Matsuyama, K. Ueno, M. Edo, T. Takahashi, M. Shimizu and J. Suda, “Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations”, Jpn. J. of Appl. Phys. 56(3), 031001 (2017).
  • H. Takagi, Y. Ota, N. Kumagai, S. Ishida, S. Iwamoto and Y. Arakawa, “Enhanced optical Stark shifts in a single quantum dot embedded in an H1 photonic crystal nanocavity”, Applied Physics Express 10, 062002 (2017).
  • 福田 浩一, 浅井 栄大, 服部 淳一, 清水 三聡, 橋詰 保, “深いトラップを含むGaN MOSキャパシタ容量のシミュレーション”, 電子情報通信学会技術研究報告 117(290), 27-32 (2017).
  • K. Fukuda, J. Hattori, H. Asai, M. Shimizu and T. Hashizume, “Simulation of GaN MOS capacitance with frequency dispersion and hysteresis”, Proceedings of 2017 Int. Conf. on Simulation of Semiconductor Processes and Devices.
  • K. Fukuda, H. Asai, J. Hattori, M. Shimizu and T. Hashizume, “Transient-mode simulation of MOS C-V characteristics for GaN”, Ext. Abstr. 2017 Int. Conf. Solid State Devices Mater., 845-846 (2017).

[2016]

  • T. Kitada, H. Ota, X. Lu, N. Kumagai and T. Isu, “Two-color surface-emitting lasers using a semiconductor coupled multilayer cavity”, Appl. Phys. Express 9, 111201 (2016).
  • X. Wang, G. Hao and N.Toda, “A novel directional light-emitting diode based on evanescent wave coupling”, Proc. of 43rd Int. Symp. on Compd. Semicond., (2016).
  • T.Yamada, K.Fukuhara, K.Matsuoka, H.Minemawari, J.Tsutsumi,N. Fukuda, K.Aoshima, S.Arai, Y.Makita, H.Kubo, T.Enomoto, T.Togashi, M.Kurihara and T.Hasegawa, "Nanoparticle chemisorption printing technique for conductive silver patterning with submicron resolution", Nat. Commun. 7, 11402 (2016).
  • H. Itagaki, S. Hirose, J. Kim, M. Ogura, X. Wang, A. Nonaka, H. Ogiso and H. Sakakita, “A low-power nitriding technique utilizing a microwave-excited radical flow”, Jpn. J. of Appl. Phys. 55 (6S2), 1-5 (2016).
  • T. Yamamoto, Y. Ota, S. Ishida, N. Kumagai, S. Iwamoto and Y. Arakawa, “Effect of metal side claddings on emission decay rates of single quantum dots embedded in a sub-wavelength semiconductor waveguide”, Jpn. J. of Appl. Phys. 55, 08RC02 (2016).
  • H. Minemawari, M. Tanaka, S. Tsuzuki, S. Inoue, T. Yamada, R. Kumai, Y. Shimoi and T. Hasegawa, “Effects of Substituted Alkyl Chain Length on Molecular Packing and Properties in Solution-Processable Organic Semiconductors”, PF Highlights, 14-15 (2016).

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