P315
Photochemical Thin Film Formation from Gaseous Organosilocon Compound.
Hiroshi Morita,
Hiroaki Ohno
Chiba University
In order to synthesize a new organosilicon film from gaseous molecules under irradiation with UV light and to investigate unique photochemical reactions inherent to noble material formation, a gaseous mixture of methyl acrylate (MA) and an organosilicon compound, trimethylsilylacetylene(TMeSiA) was irradiated with pulsed N2 laser light at 337.1 nm and with a medium pressure mercury lamp. Upon exposure to N2 laser light, pure MA and the gaseous mixture produced a thin solid film on the surface of an optical quartz window. The FT-IR spectra of the film deposited from the gaseous mixture showed the Si-O band which was not observed in the spectra of films deposited from MA and from TMeSiA, showing that the electronically excited TMeSiA molecule was incorporated into the polymerization reaction of MA.
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