P314
Crystallization of laser ablated TiO2 thin films
Mrinal Pal, Takeshi Sasaki, Naoto Koshizaki
NIMC
TiO2 thin film have been prepared using pulsed laser ablation. We have
demonstrate the nature of crystallization of these films by investigating
the X-ray diffraction (XRD) and optical absorption spectra. Good quality of
film can be deposited in the environment of less than 1 torr. Ar is found
to be more siutable than He for low temperature crystallization. Influence
of ambient pressure and deposition time is more than the laser power. It is
possible to stabilise the anatase TiO2 phase in higher temperature, even at
900 oC.
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