P310
A Study on SiC Formation by ArF Excimer Laser from Hexamethyldisilane
Tetsuo Tsuchiya,
Akio Watanabe,
Yoji Imai
NIMC
Preparaton of SiC thin film at relatively low temperature has been investigated using decomposition of hexamethyldisilane (HMDS) by ArF excimer laser CVD. Brown films were deposited at the irradiated spot by laser beam and white powder-like deposits were obtained on the inner-wall of the CVD reaction tube. The former was crystalline SiC, whereas the latter seemed to have the similar structure of polycarbosilane from the infrared spectroscopic study and to be formed in gaseous phase reaction. As the latter might be involved in the SiC formation, effect of laser irradiation to the polycarbosilane was also studied and it was found that methyl group and hydrogen bonded to Si atom in polycarbosilane could be removed by laser irradiation.
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