P303
SiOx FILM WITH TUNABLE AND INTENSE PHOTOLUMINESCENCE SYNTHESIZED BY LASER ABLATION
T. Suzuki(*), T. Ueda(*), S. Shida(*), T. Makimura(*), K. Murakami(*),
Craig B. Arnold(**), Michael J. Aziz(**),
M. Tamura(***)
(*)U. of Tsukuba,(**)U. of Harvard,(***)NAIR
Nanostructured Si-based materials can be applied to opto-electronic devices. Many researchers
have investigated synthesis methods with visible light emission and the mechanism.
SiO thin films were synthesized by laser ablation in 50 mTorr oxygen ambients. After annealing
at 1000, they exhibit bright red photoluminescence(PL) at room temperature, observable with the
naked eye under light of fluorescent lamp. The PL peak energy changes from 1.5 eV to 1.7 eV
continuously, as we measure PL from the center point of the films to the edge. FT-IR and RBS
measurements revealed that the corresponding composition of as-deposited SiO films changes
from 1.3 to 1.9. Using TEM, we confirmed that Si nanocrystallites are precipitated in SiO2 during
SiO2 growth by annealing of the SiO films. It is suggested that the average size of the
precipitated nanocrystallites depends on the composition of SiO films and PL peak energy
depends on their size.
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