P217
Photoelectrical characteristics of n-type amorphous carbon / p-type silicon solar cell.
Kalaga Murali Krishna, S. M. Mominuzzaman, T. Soga, T. Jimbo, and M. Umeno
Nagoya Institute of Technology
We have investigated carbon as an electronic material for light energy conversion devices. Our
results on the photoelectrical characteristics of phosphorus doped (n-type) amorphous carbon
/ boron doped (p-type) silicon heterojunction solar cell are presented. The properties of carbon
thin film have been evaluated through various analytical techniques such as Uv-visible, Raman,
photoelectron spectroscopy and temperature dependence of conductivity measurements. The
preliminary analyses from the capacitance-voltage characteristics are demonstrated to understand
the junction properties of the cell of above configuration through electronic band structure.
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