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グループ概要


光半導体デバイスグループ

研究目標
当グループでは、MBEやMOCVDなどの高度な結晶成長技術、マイクロ・ナノレベルでの微細加工技術を駆使して創成された半導体微細構造に特有な物理現象を利用し、高度情報化社会・低環境負荷社会の実現に貢献しうる化合物半導体・有機半導体先端光デバイス(発光・受光デバイス、光変調デバイスなど)の開発を目標とします。

研究課題
1) II-VI族化合物半導体による緑~黄色半導体レーザーの開発

BeZnCdSe量子井戸半導体レーザーの素子構造と室温連続発振特性



2) 微小リッジ・錐台構造において発現するエバネッセント光の結合効果を利用した超高効率・高指向性発光ダイオードの開発

GaN青色LEDの表面に形成された微小円錐台のSEM写真

微小円錐台のある試料と平坦表面試料との発光強度の比較

3) GaN電子デバイスを用いた小型・大電力(急速充電)ワイヤレス給電技術

GaNワイヤレス給電によるドローンTouch&Go


保有技術
・III-V族、II-VI族化合物半導体のMBE結晶成長技術
・III-V族化合物半導体のMOCVD結晶成長技術
・半導体レーザー、発光ダイオードの作製・評価技術
・有機半導体薄膜の作製・評価技術
・フォトルミネセンス、時間・空間分解フォトルミネセンスなどの材料物性評価技術
・高速ワイヤレス給電技術、高性能小型電力変換回路

主要特許・論文
【2019】
・F.Sasaki et al., “Optically pumped lasing of cyano-substituted thiophene/phenylene co-oligomer microcrystals fabricated by the slide boat method“, Jpn.J.Appl.Phys. 58-SB, SBBG05 (2019).
・N.Kumagai et al., “Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs“, J.Crystal Growth 507, 437 (2019).
・N.Kumagai et al., “Effects of N2 and NH3 plasma exposure on the surface topography of p-GaN under quasi-atmospheric pressure“, Surfaces and Interfaces 14, 92 (2019).

【2018】
・R.Akimoto et al., “Vertically Coupled Suspended Silicon Nitride Microdisk Based Optical Sensor”, IEEE Photonics Technology Letters 30, 1507 (2018).
・S.Zhai et al., “Vertically integrated waveguide self-coupled resonator based tunable optical filter”, Optics Letters 43, 3766 (2018).
・Y.Higase et al., “High-gain and wide-band optical amplifications induced by a coupled excited state of organic dye molecules co-doped in polymer waveguide“, Optics Letters 43, 1714 (2018).
・V.C.Nguyen et al., “Single-crystal perovskite CH 3 NH 3 PbBr 3 prepared by cast capping method for light-emitting diodes”, Jpn.J.Appl.Phys. 57, 04FL10 (2018).
・K.Bando et al., “Self‐Assembled Organic Crystalline Microring Cavities with High Q‐Factors”, Chem.Nano Mater. 4 936 (2018).
・D.Okada et al., “π-Electronic Co-crystal Microcavities with Selective Vibronic-Mode Light Amplification: Toward Forster Resonance Energy Transfer Lasing”, Nano Letters 18, 4396 (2018).
・X.Wang et al., “High‐Efficiency, High‐Power AlGaInP Thin‐Film LEDs with Micron‐Sized Truncated Cones as Light‐Extraction Structures”, Phys.Status Solidi A, 1700562 (2018).
・M.Nagase et al., “Stabilization of Nonvolatile Memory Operation Using GaN/AlN Resonant Tunneling Diodes by Reduction in Structural Inhomogeneity”, Jpn.J.Appl.Phys. 57, 070310 (2018).
・N.Kurahashi et al., “Whispering gallery mode lasing in lead halide perovskite crystals grown in microcapillary”, Appl.Phys.Lett. 113, 011107 (2018).
・S.Gozu et al., “Highly strained InAlP/InGaAs- based coupled double quantum wells on InP substrates”, Jpn.J.Appl.Phys. 57, 055501 (2018).
・X.Shen et al., “Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition”, Jpn.J.Appl.Phys. 57, 010306 (2018).
・R.Akimoto, “Recombination-Enhanced Effect in Green/Yellow Luminescence from BeZnCdSe Quantum Wells Grown by Molecular Beam Epitaxy”, J.Electron.Mater. (2018), https://doi.org/10.1007/s11664-018-6090-3.
・V-C.Nguyen et al., “Single-crystal perovskite CH3NH3PbBr3 prepared by cast capping method for light-emitting diodes”, Jpn.J.Appl.Phys. 57, 04FL10 (2018).

【2017】
・J.Feng et al., “Three-dimensional cross-coupled silicon nitride racetrack resonator-based tunable optical filter”,IEEE Photonics Technology Letters 29, 771 (2017).
・F.Sasaki et al., “Optically pumped lasing and electroluminescence of formamidinium perovskite semiconductors prepared by the cast-capping method”, Jpn.J.Appl.Phys. 57, 03EH05 (2017). ・
・S.Kushida et al., “Low-Threshold Whispering Gallery Mode Lasing from Self-Assembled Microspheres of Single-Sort Conjugated Polymers”, Advanced Optical Materials 5, 1700123 (2017).
・V-C. Nguyen et al., “Single-crystal perovskites prepared by simple solution process: Cast-capping method”, Journal of Crystal Growth 468, 796 (2017).
・ S.Dokiya et al., “Fabrication of polycrystalline films of cyano-substituted thiophene/phenylene co-oligomer by vaporized film deposition method”, Journal of Crystal Growth 468, 792 (2017).
・K.Torii et al., “Organic Nanowire Lasers with Epitaxially Grown Crystals of Semiconducting Oligomers”, Chem.Nano.Mater. 3, 625 (2017).
・N.Takada et al., “Thermoluminescence of coral skeletons: a high-sensitivity proxy of diagenetic alteration of aragonite”, Scientific Reports 7, 17969 (2017).
・T.Miyamae et al., “Direct probing of charge carrier behavior in multilayered organic light-emitting diode devices by time-resolved electric-field-induced sum-frequency generation spectroscopy”, Appl.Phys.Express 10, 12101 (2017).

【~2016】
・M. Nagase, et al., "Resistance switching memory operation using the bistability in current-voltage characteristics of GaN/AlN resonant tunneling diodes", JAP.J.Appl.Phys., 55(10), 1003011 (2016).
・J. V. Gonzalez-Fernandez, et al., "Residual electric fields of InGaAs/AlAs/AlAsSb (001) coupled double quantum wells structures assessed by photoreflectance anisotropy", Int.J.Modern Phys.B, 30, 1550248 (2016).
・J. Feng, et al., "BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation", Appl.Phys.Lett., 107(16), 161101-1 (2015).
・G. Wang, et al., "Controlling the directionality of spontaneous emission by evanescent wave coupling", Appl.Phys.Lett., 107(13), 131112-1 (2015).


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