Large-scale Project Overview
Strategic Development of Energy Use Rationalization（2008-2010）
|This research is being carried out under the New Energy and Industrial
Technology Development Organization (NEDO) research item of “Strategic
Development of Energy Use Rationalization / Practical Development of Energy
Use Rationalization Technology / Research and Development of GaN Bidirectional
Switch for Increased Inverter Efficiency”.
||GaN Power Device Team
Joint research with Panasonic Corporation
and Nagoya Institute of Technology
|Bidirectional switch with GIT structure
|Model for simulations of GIT structure parts
Gate part has a p layer in GIT structure.
|Gm characteristics of device having GIT structure Gm Results of simulation.
There are two Gm peaks. The second peak is due to hole injection.