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Advanced Power Electronics Research Center

Large-scale Project Overview

Strategic Development of Energy Use Rationalization(2008-2010)




This research is being carried out under the New Energy and Industrial Technology Development Organization (NEDO) research item of “Strategic Development of Energy Use Rationalization / Practical Development of Energy Use Rationalization Technology / Research and Development of GaN Bidirectional Switch for Increased Inverter Efficiency”.
GaN Power Device Team
Joint research with Panasonic Corporation
and Nagoya Institute of Technology

Bidirectional switch with GIT structure




Model for simulations of GIT structure parts
Gate part has a p layer in GIT structure.

Gm characteristics of device having GIT structure Gm Results of  simulation. There are two Gm peaks. The second peak is due to hole injection.









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