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Advanced Power Electronics Research Center

 Welcome to our website of Advanced Power Electronics Research Center. Our Research Center has conducted research and development on advanced power electronics technology which plays an important role in solving the problem of global warming.
Last.update.2018.4.10

What’s New

 May 29, 2019  "Outline of Projects " is updated.
 May 9, 2019  "Organization and Members " is updated.
 April 10, 2018  "Organization and Members " is updated.
 June 7, 2017  "Organization and Members " is updated.
 May 25, 2017  "Organization and Members" is updated.
 June 1, 2016  "Organization and Members" is updated.
 April 21, 2016  "Organization and Members" is updated.
 November 05, 2015  "Organization and Members" is updated.
 July 22, 2015  "Organization and Members" is updated.
 June 12, 2015  "Outline of Projects" is updated.
 May 7, 2015  "Organization and Members" is updated.
 January 20, 2015  "Organization and Members" is updated.
 January 7, 2015  "Organization and Members" is updated.
 July 2, 2014  "Organization and Members" is updated.
 April 4, 2014  English site is renewed.
 February 15, 2014  Several pages are updated. ("Organization and Members", "Rresearch Teams", "Site Map")
 December 3, 2013  "Rerated Links" is updated.
 September 25, 2013  "TOPICS" is updated.
 September 25, 2013  "Research Results" is updated.
 August 19, 2013  "TOPICS" is updated. It is related with creation of TPEC and is large-sized commendation award determination.
 August 19, 2013  "Job Opportunities" is updated.
 July 9, 2013  "Organization and Members", "Large-scale Project Overview", and "Research Teams" are updated.
 April 8, 2013  "TOPICS" is updated.(The recruitment start at "National Institute of Advanced Industrial Science and Technology TPEC internship")
 October 4, 2012  "Rerated Links"(APWS2013) is updated.
 October 1, 2012  Event information (SiC power semiconductor related project joint symposium), a related link, and "Job Opportunities" are updated.
 September 13, 2012  Event information is updated (National Institute of Advanced Industrial Science and Technology open lab).
 June 18, 2012  "Rerated Links" is updated.
 June 1, 2012  "Organization and Members", "Large-scale Project Overview", are updated.
  April 27, 2012  "TOPICS" is updated.
 February 17, 2012  An event and lecture meeting information are updated (-Nano tech 2012 and Smart Energy Japan 2012).
   

News & Topics

December  5, 2017 1200 volt Schottky barrier diode visceral SiC transistor development of the class
http://www.aist.go.jp/aist_j/press_release/pr2017/pr20171205/pr20171205.html
January 26, 2017  It succeeded in accurately measure the electric field of the internal power devices
 http://www.aist.go.jp/aist_j/press_release/pr2017/pr20170126/pr20170126.html
August 22, 2016 Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics 
http://www.aist.go.jp/aist_j/press_release/pr2016/pr20160822/pr20160822.html
May 22, 2014  Senior Research Scientist Kato of this research center appears in the "Reseach Hotline" column of a here public relations magazine "National Institute of Advanced Industrial Science and Technology TODAY in May." 
http://www.aist.go.jp/Portals/0/resource_images/aist_j/aistinfo/aist_today/vol14_05/vol14_05_p15.pdf
December 18, 2013  The powder materials for SiC bulk single crystal growth which realize a high sublimation rate were newly developed. http://www.aist.go.jp/aist_j/press_release/pr2013/pr20131203/pr20131203.html
September 25, 2013 The Ultra High-Voltage Device Team at theAdvanced Power Electronics Research Center succeeded in the trial production of power switching deviceSiC-IGBT of ultrahigh blocking voltage of more than 16 kV which cannot reach with the conventional Si semiconductorusing the SiC semiconductor.Flip-type n-channel implantation and epitaxial (IE)-IGBT on 4H-SiC carbon face with an epitaxial p++ collector layer was investigated, and realized ultra-high blocking voltage and low loss.This result is attained under Funding Program for World-Leading Innovative R&D on Science and Technology(FIRST) "Research and development of the innovative power electronics using silicon carbide (SiC) towards the realization of low carbon society [Core researcher; Prof. TsunenobuKimoto ;Kyoto University] " of Cabinet Office. The details of a result are presented in international conference IEDM2013 held in U.S. Washington, D.C. on 9-11 December, 2013.http://www.aist.go.jp/aist_j/press_release/pr2013/pr20130925/pr20130925.html
August 19, 2013 From Cabinet Office, there are press releases about the distinguished services prize of the 11th industry-academia-government collaboration, and the National Institute of Advanced Industrial Science and Technology, Fuji ElectricCo.,Ltd., and Ulvac Inc.won the Japan Business Federation Chairman Awardtogether. Case name is creation of " TPEC" vertical cooperation-collaborative research frontier.Summary of the reason for the award is as follows.The original structure with carbon-face SiC power device (MOSFET) was developed, and the world's best low-loss performance was achieved.The utilization-of-private-enterprises type joint research object "Tsukuba power electronics Constellations (TPEC)" which accelerates development of next-generation power semiconductor products based on this result were established, and the research and development and personnel training which abolished the wall of the organization also as that of industry, academia and government organization participation were advanced. http://www.aist.go.jp/aist_j/topics/to2013/to20130820/to20130820.html
April 27, 2012 The National Institute of Advanced Industrial Science and Technology established "Tsukuba power electronics Constellations(TPEC)"as a power electronics open innovation collaboration research consortium with private companies with the industrial world. The head of the consortium is this Center Director Okumura.
February 6, 2012 Senior Research Scientist Kojima of this research center appears in the "AIST Network" column of a here public relations magazine "National Institute of Advanced Industrial Science and Technology TODAY."
June 24, 2011 In the symposium (subject: Wide gap semiconductor power device "a quota of Si, SiC, and GaN and deployment") sponsored by theJapan Society of Applied Physics application electronic property subcommittee ,held at Kyoto Terrsa, this center directorOkumuraspoke the keynote-speech entitled "The present condition and the future view of the wide gap semiconductor power device".
January 21, 2011 At the expertise seminar in the 12th semiconductor packaging technical exhibition in the NEPCON JAPAN , this center diretorOkumuraspokeabout "Innovation of the power electronics using SiC power device."
January 20, 2011 At the expertise seminar in the 40th INTER-NEPCON JAPAN, this center Power Circuit Integration TeamLeaderSatospokeabout "The subject of SiC power device mounting 〜For realization of a high power density electric power converter〜"
June 30, 2010 At the first Tsukuba innovation arena (TIA) public presentation symposium, this center diretor Okumura introduced the target of "Power-electronics" which is a core area of investigation, or the research organization of TIA, etc.
August 4, 2009 Succeeds in the high-speed drive of the electric power converter (±5 kV-300kVA) of the high voltage and large current capacity utilizing a SiC diode.http://www.aist.go.jp/aist_j/press_release/pr2009/pr20090804/pr20090804.html#h
October 22, 2008 At the National Institute of Advanced Industrial Science and Technology symposium "Impact of the power electronicsfor realization of low carbon society (2008.10.22)" , this center diretorOkumuraspokeabout "What does the National Institute of Advanced Industrial Science and Technology do for innovation of "power electronics? "

The past home page

 Energy Semiconductor Electronics Research Laboratory/ Power Electronics Research Center

Contact

National Institute of Advanced Industrial Science and Technology
 Advanced Power Electronics Research Center

1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
FAX:+81-29-861-5032 e-mail:adperc_info-ml@aist.go.jp

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