1) A. Uedono, K. Ikeuchi, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, N. Umezawa, A. Hamid, T. Chikyow, T. Ohdaira M. Muramatsu, R. Suzuki, S. Inumiya, S. Kamiyama, Y. Akasaka, Y. Nara, and K. Yamada, Characterization of HfSiON gate dielectrics using monoenergetic positron beams, J. Appl. Phys. 99, 054507 (2006).   

2) Maekawa M, Kawasuso A, Yoshikawa M, Miyashita A, Suzuki R, Ohdaira T. Structure of SiO2/4H-SiC interface probed by positron annihilation spectroscopy. Physical Review B (Condensed Matter and Materials Physics), vol.73, no.1, 1 Jan. 2006, pp. 14111-1-9. Publisher: APS through AIP, USA.

3) Uedono A, Suzuki R, Ohdaira T, Ishibashi S. Characterization of advanced semiconductor materials by positron annihilation. Oyo Buturi, vol.74, no.9, Sept. 2005, pp. 1223-6. Publisher: Japan Soc. Appl. Phys, Japan.

4) Muramatsu M, Ohdaira T, Suzuki R. Reemission of positrons from mesh and powder moderators. Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), vol.44, no.8, Aug. 2005, pp. 6283-6. Publisher: Japan Soc. Appl. Phys, Japan.

5) Shioya Y, Shimoda H, Maeda K, Ohdaira T, Suzuki R, Seino Y. Low-k SiOCH film deposited by plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and water vapor. Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), vol.44, no.6A, June 2005, pp. 3879-84. Publisher: Japan Soc. Appl. Phys, Japan.

6) Maekawa M, Kawasuso A, Chen ZQ, Yoshikawa M, Suzuki R, Ohdaira T. Structural defects in SiO2/SiC interface probed by a slow positron beam. Applied Surface Science, vol.244, no.1-4, 15 May 2005, pp. 322-5. Publisher: Elsevier, Netherlands.

7) Uedono A, Suzuki T, Nakamura T, Ohdaira T, Suzuki R. Defects introduced into electroplated Cu films during room-temperature recrystallization probed by a monoenergetic positron beam. Journal of Applied Physics, vol.98, no.4, 15 Aug. 2005, pp. 43504-1-5. Publisher: AIP, USA.

8) Chen ZQ, Maekawa M, Kawasuso A, Suzuki R, Ohdaira T. Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam. Applied Physics Letters, vol.87, no.9, 29 Aug. 2005, pp. 91910-1-3. Publisher: AIP, USA.

9) Ogawa S, Shoji F, Ohdaira T, Suzuki I, Shimada M, Suzuki R. Behavior of vacancies in EP-Cu films by positron-annihilation lifetime spectroscopy and its impact on SIV phenomena. Proceedings of the IEEE 2005 International Interconnect Technology Conference (IEEE Cat. No. 05TH8780). IEEE. 2005, pp. 99-101. Piscataway, NJ, USA. 

10) Muramatsu M, Ohdaira T, Suzuki R. Fabrication of microparticle layer by annealing microparticle/polymer composite. Japanese Journal of Applied Physics, Part 2 (Letters), vol.44, no.8-11, 2005, pp. L268-70. Publisher: Japan Soc. Appl. Phys, Japan.

11) Uedono A, Chichibu SF, Higashiwaki M, Matsui T, Ohdaira T, Suzuki R. Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams. Journal of Applied Physics, vol.97, no.4, 15 Feb. 2005, pp. 43514-1-5. Publisher: AIP, USA.

12) Chen ZQ, Kawasuso A, Xu Y, Naramoto H, Yuan XL, Sekiguchi T, Suzuki R, Ohdaira T. Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam. Physical Review B (Condensed Matter and Materials Physics), vol.71, no.11, 15 March 2005, pp. 115213-1-8. Publisher: APS through AIP, USA.

13) Shoji F, Ohdaira T, Suzuki I, Shimada M, Suzuki R, Ogawa S. Behaviors of vacancies in electro-plated Cu films by positron-annihilation lifetime spectroscopy correlated with SIV phenomena. Advanced Metallization Conference 2004 (AMC 2004). Materials Research Society. 2005, pp. 313-19. Warrendale, PA, USA. 

14) Uedono A, Goto M, Higuchi K, Shiraishi K, Yamabe K, Kitajima H, Mitsuhashi R, Horiuchi A, Torii K, Arikado T, Suzuki R, Ohdaira T, Yamada K. Characterization of Hf0.3Al0.7Ox fabricated by atomic-layer-deposition technique using monoenergetic positron beams. Japan Soc. Appl. Phys. Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), vol.43, no.11B, Nov. 2004, pp. 7848-52.  Japan.

15) Uedono A, Hattori N, Ogura A, Kudo J, Nishikawa S, Ohdaira T, Suzuki R, Mikado T. Characterizing metal-oxide semiconductor structures consisting of HfSiOx as gate dielectrics using monoenergetic positron beams. Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), vol.43, no.4A, April 2004, pp. 1254-9. Publisher: Japan Soc. Appl. Phys, Japan.

16) Chen ZQ, Kawasuso A, Xu Y, Naramoto H, Yuan XL, Sekiguchi T, Suzuki R, Ohdaira T. Production and recovery of defects in phosphorus-implanted ZnO. Journal of Applied Physics, vol.97, no.1, 1 Jan. 2005, pp. 13528-1-6. Publisher: AIP, USA.

17) Algers J, Suzuki R, Ohdaira T, Maurer FHJ. Characterization of free volume and density gradients of polystyrene surfaces by low-energy positron lifetime measurements. Polymer, vol.45, no.13, 3 June 2004, pp. 4533-9. Publisher: Elsevier, UK.

18) Shioya Y, Maeda K, Ishimaru T, Ikakura H, Masubuchi T, Ohdaira T, Suzuki R. Properties of low-k Cu barrier SiOCNH film deposited by plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and ammonia gases. Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), vol.43, no.2, Feb. 2004, pp. 750-6. Publisher: Japan Soc. Appl. Phys, Japan.

19) Uedono A, Mitsuhashi R, Horiuchi A, Torii K, Yamabe K, Yamada K, Suzuki R, Ohdaira T, Mikado T. Point defects in thin HfAlOx films probed by monoenergetic positron beams. Fundamentals of Novel Oxide/Semiconductor Interfaces Symposium (Mater. Res. Soc. Symposium Proceedings Vol.786). Mater. Res. Soc. 2004, pp. 43-8. Warrendale, PA, USA. 

20) Ito K, Kobayashi Y, Suzuki R, Ohdaira T, Runsheng Yu, Sato K, Hirata K, Togashi H, Egami M, Arao H, Nakashima A, Komatsu M. Characterization of porous silicate low-k films by ellipsometric porosimetry and variable-energy positron annihilation spectroscopy. Continuous Nanophase and Nanostructured Materials Symposium (Mater. Res. Soc. Symposium Proceedings Vol.788). Mater. Res. Soc. 2004, pp. 397-402. Warrendale, PA, USA.

21) Fujinami M, Miyagoe T, Sawada T, Suzuki R, Ohdaira T, Akahane T. Identification of vacancy-oxygen complexes in oxygen-implanted silicon probed with slow positrons. Journal of Applied Physics, vol.95, no.7, 1 April 2004, pp. 3404-10. Publisher: AIP, USA.

22) Uedono A, Ohdaira T, Suzuki R, Mikado T, Fukui S, Kimura S, Miyamoto H, Nemoto H. Characterization of photoresists for ArF-excimer laser lithography using monoenergetic positron beams. Journal of Polymer Science, Part B (Polymer Physics), vol.42, no.2, 15 Jan. 2004, pp. 341-6. Publisher: Wiley, USA.

23) Chen ZQ, Maekawa M, Yamamoto S, Kawasuso A, Yuan XL, Sekiguchi T, Suzuki R, Ohdaira T. Evolution of voids in Al+-implanted ZnO probed by a slow positron beam. Physical Review B (Condensed Matter and Materials Physics), vol.69, no.3, 15 Jan. 2004, pp. 35210-1-10. Publisher: APS through AIP, USA.

24)  Suzuki, R., Ohdaira, T., Kobayashi, Y., Ito, K., R.S. Yu, Shioya, Y., Ichikawa, H., Hosomi, H. Ishikiriyama, K., Shirataki, H., Matsuno, S., Xu, J., Positron and positronium annihilation in low-dielectric-constant films studied by a pulsed positron beam, Materials Science Forum 445-446, 224-228 (2004).

25) Ohdaira, T., Suzuki, R., Shirataki, H., Matsuno, S., Positron annihilation lifetime spectroscopy of porous low-k films with periodic pore structures, Materials Science Forum 445-446, 224-228 (2004).

26) 日経先端技術「産総研と半導体プロセス研究所−次世代LSI絶縁膜の空隙分布を測定−サブナノメートル領域も観察成功−陽電子寿命測定装置を活用」, No.29., pp.3-5 (2003).

27) Uedono A, Kiyohara M, Shimoyama K, Yamabe K, Ohdaira T, Suzuki R, Mikado T. Defects introduced into SrTiO3 by auto-feeding epitaxy studied using positron annihilation technique. Elsevier. Materials Science in Semiconductor Processing, vol.6, no.5-6, 2003, pp. 367-9.  UK.

28) Uedono A, Mitsuhashi R, Horiuchi A, Torii K, Yamabe K, Yamada K, Suzuki R, Ohdaira T, Mikado T. Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation. Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765). IEEE. 2003, pp. 120-2. Piscataway, NJ, USA.

29) Fujinami M, Miyagoe T, Sawada T, Suzuki R, Ohdaira T, Akahane T. A positron beam study of vacancy-impurity complexes in inert gas ion-implanted silicon. Elsevier. Physica B, vol.340-342, 31 Dec. 2003, pp. 724-8.  Netherlands.

30) Li Y, Wu YC, Zhang R, Chen H, Zhang J, Suzuki T, Sandreckzki TC, Ohdaira T, Jean YC. Salt weathering effect of polymer coatings studied by positron annihilation spectroscopy. Elsevier. Radiation Physics and Chemistry, vol.68, no.3-4, Oct.-Nov. 2003, pp. 581-7.  UK.

31) Zhang J, Zhang R, Chen H, Li Y, Wu YC, Suzuki R, Sandreckski TC, Ohdaira T, Jean YC. Surface and interfacial effect on polymer glass transition temperature studied by positron annihilation. Elsevier. Radiation Physics and Chemistry, vol.68, no.3-4, Oct.-Nov. 2003, pp. 535-9.  UK.

32) Ito K, Kobayashi Y, Hirata K, Togashi H, Suzuki R, Ohdaira T. Mesoporous low-k hydrogen-silsesquioxane films characterized by positron annihilation and other techniques. Elsevier. Radiation Physics and Chemistry, vol.68, no.3-4, Oct.-Nov. 2003, pp. 435-7.  UK.

33) Jean YC, Mallon PE, Zhang R, Hongmin Chen, Ying Li, Junjie Zhang, Wu YC, Sandreczki TC, Suzuki R, Ohdaira T, Gu X, Nguyen T. Positron studies of polymeric coatings. Elsevier. Radiation Physics and Chemistry, vol.68, no.3-4, Oct.-Nov. 2003, pp. 395-402.  UK.

34) Suzuki R, Ohdaira T, Kobayashi Y, Ito K, Shioya Y, Ishimaru T. Positron and positronium annihilation in silica-based thin films studied by a pulsed positron beam. Elsevier. Radiation Physics and Chemistry, vol.68, no.3-4, Oct.-Nov. 2003, pp. 339-43.  UK.

35) Shioya Y, Ishimaru T, Ikakura H, Nishimoto Y, Ohdaira T, Suzuki R, Maeda K. Copper barrier properties of low dielectric constant SiOCNH film deposited by plasma-enhanced CVD. Journal of the Electrochemical Society, vol.151, no.1, Jan. 2004, pp. C56-61. Publisher: Electrochem. Soc, USA.

36) Yu RS, Ohdaira T, Suzuki R, Ito K, Hirata K, Sato K, Kobayashi Y, Jun Xu. Positronium time-of-flight measurements of porous low-k films. Applied Physics Letters, vol.83, no.24, 15 Dec. 2003, pp. 4966-8. Publisher: AIP, USA.

37) Jun Xu, Moxom J, Suzuki R, Ohdaira T, Mills AP Jr. Characterization of nanoparticle and porous ultra low-k using positron beam. Proceedings of the 3rd International Symposium on Material Chemistry in Nuclear Environment (Materials Chemistry'02 MC'02). Japan Atomic Energy Res. Inst. 2003, pp. 118-26. Ibaraki-ken, Japan. 

38) Fujinami M, Miyagoe T, Sawada T, Suzuki R, Ohdaira T, Akahane T. Helium ion implantation-induced defects in silicon probed with variable-energy positrons. Physical Review B (Condensed Matter and Materials Physics), vol.68, no.16, 15 Oct. 2003, pp. 165332-1-5. Publisher: APS through AIP, USA.

39) Suzuki R, Ohdaira T. Characterization of surfaces and subsurfaces by an intense positron beam. Proceedings of the 3rd International Symposium on Material Chemistry in Nuclear Environment (Materials Chemistry'02 MC'02). Japan Atomic Energy Res. Inst. 2003, pp. 189-94. Ibaraki-ken, Japan. 

40) Kenji Ito, Kobayashi Y, Runsheng Yu, Hirata K, Togashi H, Suzuki R, Ohdaira T, Egami M, Arao H, Sakurai C, Nakashima A, Komatsu M. Study of pore architecture in silicon oxide thin films by variable-energy positron annihilation spectroscopy. Structure-Property Relationships of Oxide Surfaces and Interfaces II. Symposium (Mater. Res. Soc. Symposium Proceedings Vol.751). Mater. Res. Soc. 2003, pp. 97-102. Warrendale, PA, USA. 

41) Takagi K, Furukawa N, Kanazawa I, Suzuki R, Ohdaira T. Formation of hydrogen-induced vacancies during growth of the Fe layer studied by slow positron beam. Elsevier. Surface Science, vol.514, no.1-3, 10 Aug. 2002, pp. 298-302.  Netherlands.

42) Ishimaru T, Shioya Y, Ikakura H, Nozawa M, Ohgawara S, Ohdaira T, Suzuki R, Maeda K. Properties of low-k copper barrier SiOCH film deposited by PECVD using hexamethyldisiloxane and N2O. Journal of the Electrochemical Society, vol.150, no.5, May 2003, pp. F83-9. Publisher: Electrochem. Soc, USA.

43) Uedono A, Mori T, Morisawa K, Murakami K, Ohdaira T, Suzuki R, Mikado T, Ishioka K, Kitajima M, Hishita S, Haneda H, Sakaguchi I. Hydrogen-terminated defects in ion-implanted silicon probed by monoenergetic positron beams. Journal of Applied Physics, vol.93, no.6, 15 March 2003, pp. 3228-33. Publisher: AIP, USA.

44) Uedono A, Zhi Quan Chen, Ogura A, Suzuki R, Ohdaira T, Mikado T. Defects in silicon-on-insulator wafers and their hydrogen interaction studied by monoenergetic positron beams. Journal of Applied Physics, vol.91, no.10, 15 May 2002, pp. 6488-92. Publisher: AIP, USA.

45) Uedono A, Yamamoto H, Nakano A, Ogura A, Ohdaira T, Suzuki R, Mikado T. Oxygen-related defects in silicon-on-insulator wafers probed monoenergetic positron beams. 2002 IEEE International SOI Conference. Proceedings (Cat. No.02CH37347). IEEE. 2002, pp. 196-7. Piscataway, NJ, USA. 

46) Jun Xu, Moxom J, Shu Yang, Suzuki R, Ohdaira T. Dependence of porosity in methyl-silsesquioxane thin films on molecular weight of sacrificial triblock copolymer. Chemical Physics Letters, vol.364, no.3-4, 4 Oct. 2002, pp. 309-13. Publisher: Elsevier, Netherlands.

47) Ohdaira T, Suzuki R, Kobayashi Y, Akahane T, Dai L. Surface analysis of a well-aligned carbon nanotube film by positron-annihilation induced Auger-electron spectroscopy. Elsevier. Applied Surface Science, vol.194, no.1-4, 21 June 2002, pp. 291-5.  Netherlands.

48) Jun Xu, Moxom J, Shu Yang, Suzuki R, Ohdaira T. Porosity in porous methyl-silsesquioxane (MSQ) films. Elsevier. Applied Surface Science, vol.194, no.1-4, 21 June 2002, pp. 189-94.  Netherlands.

49) Mallon PE, Li Y, Zhang R, Chen H, Wu Y, Sandreczki TC, Jean YC, Suzuki R, Ohdaira T. Durability of polymeric coatings: effects of natural and artificial weathering. Elsevier. Applied Surface Science, vol.194, no.1-4, 21 June 2002, pp. 176-81.  Netherlands.

50) Chen H, Peng Q, Huang YY, Zhang R, Mallon PE, Zhang J, Li Y, Wu Y, Richardson JR, Sandreczki TC, Jean YC, Suzuki R, Ohdaira T. Mechanical durability of polymeric coatings studied by positron annihilation spectroscopy: correlation between cyclic loading and free volumes. Elsevier. Applied Surface Science, vol.194, no.1-4, 21 June 2002, pp. 168-75.  Netherlands.

51) Chen ZQ, Uedona A, Ogura A, Ono H, Suzuki R, Ohdaira T, Mikado T. Oxygen-related defects and their annealing behavior in low-dose separation-by-implanted oxygen (SIMOX) wafers studied by slow positron beams. Elsevier. Applied Surface Science, vol.194, no.1-4, 21 June 2002, pp. 112-15.  Netherlands.

52) Suzuki R, Ohdaira T, Uedono A, Kobayashi Y. Positron annihilation in SiO2-Si studied by a pulsed slow positron beam. Elsevier. Applied Surface Science, vol.194, no.1-4, 21 June 2002, pp. 89-96.  Netherlands.

53) Kawamura S, Ohta T, Omote K, Ito Y, Suzuki R, Ohdaira T. A new measurement technique of pore size distribution of porous low-k films. Advanced Metallization Conference 2001 (AMC 2001). Proceedings of the Conference. Mater. Res. Soc. 2001, pp. 331-6. Warrendale, PA, USA. 

54) Sato K, Uchiyama H, Kanazawa I, Tamura R, Kimura K, Komori F, Suzuki R, Ohdaira T, Takeuchi S. Aluminum based quasicrystals studied by slow positron beam technique. Quasicrystals - Preparation, Properties and Applications. Symposium (Materials Research Society Symposium Proceedings Vol.643) . Mater. Res. Soc. 2001, pp. K9.10.1-6. Warrendale, PA, USA. 

55) Shioya Y, Maeda K, Ishimaru T, Ohdaira T, Suzuki R. Analysis of pore and pore-related properties in plasma-enhanced chemical vapor deposition low dielectric constant films. Journal of the Electrochemical Society, vol.149, no.9, Sept. 2002, pp. F103-9. Publisher: Electrochem. Soc, USA.

56) Moxom J, Jun Xu, Suzuki R, Ohdaira T, Brandes G, Flynn JS. Characterization of Mg doped GaN by positron annihilation spectroscopy. Journal of Applied Physics, vol.92, no.4, 15 Aug. 2002, pp. 1898-901. Publisher: AIP, USA.

57) Uedono A, Shimoyama K, Kiyohara M, Zhi Quan Chen, Yamabe K, Ohdaira T, Suzuki R, Mikado T. Vacancy-type defects in BaTiO3/SrTiO3 structures probed by monoenergetic positron beams. Journal of Applied Physics, vol.91, no.8, 15 April 2002, pp. 5307-12. Publisher: AIP, USA.

58) Kobayashi Y, Zheng W, Chang TB, Hirata K, Suzuki R, Ohdaira T, Ito K. Nanoporous structure of sputter-deposited silicon oxide films characterized by positronium annihilation spectroscopy. Journal of Applied Physics, vol.91, no.3, 1 Feb. 2002, pp. 1704-6. Publisher: AIP, USA.

59) Suzuki R, Ohdaira T, Mikado T, Venugopal Rao G. Development of high-rate age-momentum correlation system with a variable-energy pulsed positron beam. Trans Tech Publications. Materials Science Forum, vol.363-365, 2001, pp. 661-3.  Switzerland.

60) Ohdaira T, Suzuki R, Mikado T. Time-of-flight analysis of positron-annihilation induced Auger-electrons and re-emitted positrons. Trans Tech Publications. Materials Science Forum, vol.363-365, 2001, pp. 542-6.  Switzerland.

61) Zhang R, Mallon PE, Chen H, Huang C-M, Junjie Zhang, Ying Li, Cao H, Peng Q, Richardson JR, Huang YY, Sandreczki TC, Jean YC, Suzuki R, Ohdaira T, Nielsen B. Polymeric coating degradation in accelerated weathering investigated by using positron annihilation spectroscopy. Trans Tech Publications. Materials Science Forum, vol.363-365, 2001, pp. 505-7.  Switzerland.

62) Nagata T, Terashima Y, Takagi K, Kawai T, Kanazawa I, Suzuki R, Ohdaira T, Komori F, Ito Y. The estimation of the vacancy-type defects density in thin Fe film with slow positron beams. Trans Tech Publications. Materials Science Forum, vol.363-365, 2001, pp. 490-2.  Switzerland.

63) Sato K, Uchiyama H, Takahashi Y, Kanazawa I, Tamura R, Kimura K, Komori F, Suzuki R, Ohdaira T, Takeuchi S. Determination of structural vacancy densities in icosahedral quasicrystals by slow positron beam technique. Trans Tech Publications. Materials Science Forum, vol.363-365, 2001, pp. 481-3.  Switzerland.

64) Amarendra G, Rajaraman R, Venugopal Rao G, Nair KGM, Viswanathan B, Suzuki R, Ohdaira T, Mikado T. Positron beam Doppler and lifetime studies on disordered and amorphous Si. Trans Tech Publications. Materials Science Forum, vol.363-365, 2001, pp. 129-31.  Switzerland.

65) Uedono A, Zhi Quan Chen, Ogura A, Ono H, Suzuki R, Ohdaira T, Mikado T. Oxygen-related defects in low-dose separation-by-implanted oxygen wafers probed by monoenergetic positron beams. Journal of Applied Physics, vol.90, no.12, 15 Dec. 2001, pp. 6026-31. Publisher: AIP, USA.

66) Wu YC, Chia-Ming Huang, Li Y, Zhang R, Chen H, Mallon PE, Zhang J, Sandreczki TC, Da-Ming Zhu, Jean YC, Suzuki R, Ohdaira T. Deterioration of a polyurethane coating studied by positron annihilation spectroscopy: correlation with surface properties. Journal of Polymer Science, Part B (Polymer Physics), vol.39, no.19, 1 Oct. 2001, pp. 2290-301. Publisher: Wiley, USA.

67) Kawamura S, Maekawa K, Ohta T, Omote K, Suzuki R, Ohdaira T, Tachibana M, Suzuki K. New measurement technique of pore size distribution of porous low-k film. Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461). IEEE. 2001, pp. 195-7. Piscataway, NJ, USA. 

68) Zhang R, Chen H, Cao H, Huang C-M, Mallon PE, Li Y, He Y, Sandreczki TC, Jean YC, Suzuki R, Ohdaira T. Degradation of polymer coating systems studied by positron annihilation spectroscopy. IV. Oxygen effect of UV irradiation. Journal of Polymer Science, Part B (Polymer Physics), vol.39, no.17, 1 Sept. 2001, pp. 2035-47. Publisher: Wiley, USA.

69) Wang CL, Kobayashi Y, Hirata K, Suzuki R, Ohdaira T, Mikado T. Nanometer-scale voids in PECVD silicon-oxide films probed by variable-energy positron lifetime spectroscopy: a comparison with infrared spectroscopy. Elsevier. Radiation Physics and Chemistry, vol.60, no.4-5, 2001, pp. 545-9.  UK.

70) Uedono A, Zhi Quan Chen, Suzuki R, Ohdaira T, Mikado T, Fukui S, Shiota A, Kimura S. Nanoporous structure of methyl-silsesquioxane films using monoenergetic positron beams. Journal of Applied Physics, vol.90, no.5, 1 Sept. 2001, pp. 2498-503. Publisher: AIP, USA.

71) Ueno T, Irisawa T, Shiraki Y, Uedono A, Tanigawa S, Suzuki R, Ohdaira T, Mikado T. Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy. Elsevier. Journal of Crystal Growth, vol.227-228, July 2001, pp. 761-5.  Netherlands.

72) Sato K, Uchiyama H, Takahashi Y, Kanazawa I, Suzuki R, Ohdaira T, Takeuchi T, Mizuno T, Mizutani U. Positron-annihilation studies of rhombic triacontahedral-type icosahedral quasicrystals and their 1/1 and 2/1 approximants in the Al-Mg-Zn alloy system. Physical Review B (Condensed Matter and Materials Physics), vol.64, no.2, 1 July 2001, pp. 0242021-8. Publisher: APS through AIP, USA.

73) Amarendra G, Rajaraman R, Rao GV, Nair KGM, Viswanathan B, Suzuki R, Ohdaira T, Mikado T. Identification of open-volume defects in disordered and amorphized Si: A depth-resolved positron annihilation study. Physical Review B (Condensed Matter and Materials Physics), vol.63, no.22, 1 June 2001, pp. 2241121-6. Publisher: APS through AIP, USA.

74) Wang CL, Kobayashi Y, Katoh R, Suzuki R, Ohdaira T. Nanostructure of thin amorphous hydrogenated carbon films studied by positron annihilation and photoluminescence. Journal of Applied Physics, vol.90, no.1, 1 July 2001, pp. 404-10. Publisher: AIP, USA.

75) Uedono A, Chichibu SF, Chen ZQ, Sumiya M, Suzuki R, Ohdaira T, Mikado T, Mukai T, Nakamura S. Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams. Journal of Applied Physics, vol.90, no.1, 1 July 2001, pp. 181-6. Publisher: AIP, USA.

76) Suzuki R, Ohdaira T, Shioya Y, Ishimaru T. Pore characteristics of low-dielectric-constant films grown by plasma-enhanced chemical vapor deposition studied by positron annihilation lifetime spectroscopy. Japanese Journal of Applied Physics, Part 2 (Letters), vol.40, no.4B, 15 April 2001, pp. L414-16. Publisher: Japan Soc. Appl. Phys, Japan.

77) Niki S, Suzuki R, Ishibashi S, Ohdaira T, Fons PJ, Yamada A, Oyanagi H, Wada T, Kimura R, Nakada T. Anion vacancies in CuInSe2. Elsevier. Thin Solid Films, vol.387, no.1-2, 29 May 2001, pp. 129-34.  Switzerland.

78) Uedono A, Muramatsu M, Ubukata T, Watanabe M, Ichihashi T, Suzuki R, Ohdaira T, Mikado T, Takasu S. A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams. Journal of Applied Physics, vol.89, no.7, 1 April 2001, pp. 3606-10. Publisher: AIP, USA.

79) Uedono A, Muramatsu M, Ubukata T, Tanino H, Tanigawa S, Nakano A, Yamamoto H, Suzuki R, Ohdaira T, Mikado T. Oxygen-related defects introduced by As+-implantation through cap layers in Si probed by monoenergetic positron beams. Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), vol.39, no.11, Nov. 2000, pp. 6126-9. Publisher: Japan Soc. Appl. Phys, Japan.

80) Uchiyama H, Takahashi Y, Sato K, Kanazawa I, Kimura K, Komori F, Suzuki R, Ohdaira T, Tamura R, Takeuchi S. Stable quasicrystals studied by means of the slow positron beam. Elsevier. Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), vol.171, no.1-2, Aug. 2000, pp. 245-50.  Netherlands.

81) Nagata T, Ozaki A, Terashima Y, Kanazawa I, Suzuki R, Ohdaira T, Komori F, Ito Y. Solid-state amorphization in multilayer Fe/Hf studied by slow positrons. Elsevier. Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), vol.171, no.1-2, Aug. 2000, pp. 240-4.  Netherlands.

82) Tanaka Y, Kobayashi N, Okumura H, Suzuki R, Ohdaira T, Hasegawa M, Ogura M, Yoshida S, Tanoue H. Electrical and structural properties of Al and B implanted 4H-SiC. Trans Tech Publications. Materials Science Forum, vol.338-342, pt.2, 2000, pp. 909-12.  Switzerland.

83) Cao H, Zhang R, Chen HM, Mallon P, Huang C-M, He Y, Sandreczki TC, Jean YC, Nielsen B, Friessnegg T, Suzuki R, Ohdaira T. Application of slow positrons to coating degradation. Elsevier. Radiation Physics and Chemistry, vol.58, no.5-6, 2000, pp. 645-8.  UK.

84) Zhang R, Cao H, Chen HM, Mallon P, Sandreczki TC, Richardson JR, Jean YC, Nielsen B, Suzuki R, Ohdaira T. Development of positron annihilation spectroscopy to test accelerated weathering of protective polymer coatings. Elsevier. Radiation Physics and Chemistry, vol.58, no.5-6, 2000, pp. 639-44.  UK.

85) Hirata K, Monguchi T, Suzuki R, Ohdaira T, Kobayashi Y, Kumagai T, Tsunoda T, Hishita S, Mikado T, Fujioka H, Oshima M. Characterization of porous SiC by variable-energy positron beams. Elsevier. Radiation Physics and Chemistry, vol.58, no.5-6, 2000, pp. 621-4.  UK.

86) Suzuki R, Ohdaira T, Mikado T. A positron lifetime spectroscopy apparatus for surface and near-surface positronium experiments. Elsevier. Radiation Physics and Chemistry, vol.58, no.5-6, 2000, pp. 603-6.  UK.

87) Huang CM, Yuan J-P, Cao H, Zhang R, Jean YC, Suzuki R, Ohdaira T, Nielsen B. Positron annihilation studies of chromophore-doped polymers. Elsevier. Radiation Physics and Chemistry, vol.58, no.5-6, 2000, pp. 571-4.  UK.

88) Yamada K, Sei N, Ohgaki H, Mikado T, Suzuki R, Ohdaira T, Toyokawa H, Yamazaki T. Research on free electron lasers in the UV range using the compact storage ring NIJI-IV. Bulletin of the Electrotechnical Laboratory, vol.63, no.11, 1999, pp. 113-29. Publisher: Agency Ind. Sci. & Technol. Minist. Int. Trade & Ind., Ibaraki, Japan.

89) Sei N, Yamada K, Ohgaki H, Mikado T, Suzuki R, Ohdaira T, Toyokawa H, Yamazaki T, Tomimasu T, Kawai M, Yokoyama M, Sugiyama S, Noguchi T, Chiwaki M. Development of the electron storage ring NIJI-IV dedicated to free electron lasers. Bulletin of the Electrotechnical Laboratory, vol.63, no.11, 1999, pp. 99-111. Publisher: Agency Ind. Sci. & Technol. Minist. Int. Trade & Ind., Ibaraki, Japan.

90) Ohgaki H, Toyokawa H, Yamazaki T, Sugiyama S, Noguchi T, Mikado T, Ohdaira T, Suzuki R, Sei N, Yamada K, Chiwaki M. Photon scattering experiments with completely polarized photon beam. Bulletin of the Electrotechnical Laboratory, vol.63, no.11, 1999, pp. 81-9. Publisher: Agency Ind. Sci. & Technol. Minist. Int. Trade & Ind., Ibaraki, Japan.

91) Ohdaira T, Suzuki R, Mikado T. Development of an apparatus for time-of-flight positron-annihilation induced Auger electron spectroscopy. Bulletin of the Electrotechnical Laboratory, vol.63, no.11, 1999, pp. 21-9. Publisher: Agency Ind. Sci. & Technol. Minist. Int. Trade & Ind., Ibaraki, Japan.

92) Suzuki R, Ohdaira T, Mikado T. Measurement of re-emitted positrons by a pulsed positron beam. Bulletin of the Electrotechnical Laboratory, vol.63, no.11, 1999, pp. 15-20. Publisher: Agency Ind. Sci. & Technol. Minist. Int. Trade & Ind., Ibaraki, Japan.

93) Suzuki R, Ohdaira T, Mikado T. Microstructure characterization of near surface regions using variable energy positron lifetime spectroscopy. Bulletin of the Electrotechnical Laboratory, vol.63, no.11, 1999, pp. 5-13. Publisher: Agency Ind. Sci. & Technol. Minist. Int. Trade & Ind., Ibaraki, Japan.

94) Uedono A, Tanigawa S, Ohshima T, Itoh H, Yoshikawa M, Nashiyama I, Frank T, Pensl G, Suzuki R, Ohdaira T, Mikado T. Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams. Journal of Applied Physics, vol.87, no.9, pt.1-3, 1 May 2000, pp. 4119-25. Publisher: AIP, USA.

95) Uedono A, Tanigawa S, Ogura A, Ono H, Suzuki R, Ohdaira T, Mikado T. Annealing properties of defects during Si-on-insulator fabrication by low-dose oxygen implantation studied by monoenergetic positron beams. Journal of Applied Physics, vol.87, no.4, 15 Feb. 2000, pp. 1659-65. Publisher: AIP, USA.

96) Uedono A, Suzuki R, Ohdaira T, Mikado T, Tanigawa S, Ban M, Kyoto M, Uozumi T. Open spaces and relaxation processes in the subsurface region of polypropylene probed by monoenergetic positron beams. Journal of Polymer Science, Part B (Polymer Physics), vol.38, no.1, 1 Jan. 2000, pp. 101-7. Publisher: Wiley, USA.

97) Uedono AA, Hiketa M, Tanigawa SA, Kitano T, Kubota T, Makabe M, Suzuki R, Ohdaira T, Mikado T. Defects in p+-gate metal-oxide-semiconductor structures probed by monoenergetic positron beams. Journal of Applied Physics, vol.86, no.10, 15 Nov. 1999, pp. 5385-91. Publisher: AIP, USA.

98) Ohshima T, Itoh H, Uedono A, Suzuki R, Ishida Y, Takahashi T, Yoshikawa M, Kozima K, Ohdaira T, Nashiyama I, Tanigawa S, Okumura H, Yoshida S, Mikado T, Okada S. Study of residual defects in ion-implanted and subsequently annealed 3C-SiC. Bulletin of the Electrotechnical Laboratory, vol.62, no.10-11, 1998, pp. 31-8. Publisher: Agency Ind. Sci. & Technol. Minist. Int. Trade & Ind., Ibaraki, Japan.

99) Cao H, Yuan J-P, Zhang R, Sundar CS, Jean YC, Suzuki R, Ohdaira T, Nielsen B. Free volumes and holes near the polymer surface studied by positron annihilation. Elsevier. Applied Surface Science, vol.149, no.1-4, Aug. 1999, pp. 116-24.  Netherlands.

100) Suzuki R, Amarendra G, Ohdaira T, Mikado T. Positron re-emission from tungsten surfaces. Elsevier. Applied Surface Science, vol.149, no.1-4, Aug. 1999, pp. 66-70.  Netherlands.

101) Ohdaira T, Suzuki R, Mikado T. Time-of-flight positron-annihilation induced Auger electron spectroscopy studies of adsorption of oxygen on Si(100). Elsevier. Applied Surface Science, vol.149, no.1-4, Aug. 1999, pp. 260-3.  Netherlands.

102) Fujinami M, Suzuki R, Ohdaira T, Mikado T. Characterization of H-related defects in H-implanted Si with slow positrons. Elsevier. Applied Surface Science, vol.149, no.1-4, Aug. 1999, pp. 188-92.  Netherlands.

103) Ohdaira T, Suzuki R, Mikado T. Surface top-layer analysis by positron annihilation induced Auger electron spectroscopy. Elsevier. Surface Science, vol.433-435, 2 Aug. 1999, pp. 239-43.  Netherlands.

104) Niki S, Fons PJ, Lacroix Y, Iwata K, Yamada A, Oyanagi H, Uchino M, Suzuki Y, Suzuki R, Ishibashi S, Ohdaira T, Sakai N, Yokokawa H. Control of intrinsic defects in molecular beam epitaxy grown CuInSe 2. Elsevier. Journal of Crystal Growth, vol.201-202, May 1999, pp. 1061-4.  Netherlands.

105) Somieski B, Hulett LD, Jun Xu, Pint BA, Tortorelli PF, Nielsen B, Asoka-Kumar P, Suzuki R, Ohdaira T. Microstructure of thermally grown and deposited alumina films probed with positrons. Physical Review B (Condensed Matter), vol.59, no.10, 1 March 1999, pp. 6675-88. Publisher: APS through AIP, USA.

106) Sato K, Takahashi Y, Uchiyama H, Kanazawa I, Tamura R, Kimura K, Komori F, Suzuki R, Ohdaira T, Takeuchi S. Positron-annihilation studies of stable Al-based icosahedral quasicrystals. Physical Review B (Condensed Matter), vol.59, no.10, 1 March 1999, pp. 6712-16. Publisher: APS through AIP, USA.

107) Suzuki R, Ohdaira T, Ishibashi S, Uedono A, Niki S, Fons PJ, Yamada A, Mikado T, Yamazaki T, Tanigawa S. Characterization of intrinsic defects in CuInSe2 films by monoenergetic positron beams. Ternary and Multinary Compounds. Proceedings of the 11th International Conference on Ternary and Multinary Compounds. ICTMC-11 . Institute of Physics Publishing. 1998, pp. 757-60. Bristol, UK. 

108) Cao H, Zhang R, Yuan J-P, Huang C-M, Jean YC, Suzuki R, Ohdaira T, Nielsen B. Free-volume hole model for positronium formation in polymers: surface studies. IOP Publishing. Journal of Physics: Condensed Matter, vol.10, no.46, 23 Nov. 1998, pp. 10429-42.  UK.

109) Niki S, Fons PJ, Yamada A, Suzuki R, Ohdaira T, Ishibashi S, Oyanagi H. High-quality CuInSe2 epitaxial films-molecular beam epitaxial growth and intrinsic properties. Ternary and Multinary Compounds. Proceedings of the 11th International Conference on Ternary and Multinary Compounds. ICTMC-11 . Institute of Physics Publishing. 1998, pp. 221-7. Bristol, UK. 

110) Fujinami M, Suzuki R, Ohdaira T, Mikado T. Thermal evolution of defects in H-implanted Si studied by monoenergetic positrons. Physical Review B (Condensed Matter), vol.58, no.19, 15 Nov. 1998, pp. 12559-62. Publisher: APS through AIP, USA.

111) Yamazaki T, Yamada K, Sei N, Ohgaki H, Sugiyama S, Suzuki R, Mikado T, Noguchi T, Chiwaki M, Ohdaira T, Toyokawa H. SRFEL, FEL-X project, and applications at the ETL. Elsevier. Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), vol.144, no.1-4, 15 Sept. 1998, pp. 83-9.  Netherlands.

112) Uedono A, Suzuki R, Ohdaira T, Uozumi T, Ban M, Kyoto M, Tanigawa S, Mikado T. Open spaces in the subsurface region of polyethylene probed by monoenergetic positron beams. Journal of Polymer Science, Part B (Polymer Physics), vol.36, no.14, Oct. 1998, pp. 2597-605. Publisher: Wiley, USA.

113) Imanishi N, Ohdaira T, Hadano K, Aratake A, Imai M, Itoh A. Neutralization of intermediate-velocity Li emerging from Cs- and oxygen-covered Si(100) and GaAs(110) surfaces. Elsevier. Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), vol.135, no.1-4, Feb. 1998, pp. 413-18.  Netherlands.

114) Suzuki R, Ohdaira T, Uedono A, Yang Koo Cho, Yoshida S, Ishida Y, Ohshima T, Itoh H, Chiwaki M, Mikado T, Yamazaki T, Tanigawa S. Investigation of positron moderator materials for electron-linac-based slow positron beamlines. Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), vol.37, no.8, Aug. 1998, pp. 4636-43. Publisher: Publication Office, Japanese Journal Appl. Phys, Japan.

115) Uedono A, Ohshima T, Itoh H, Suzuki R, Ohdaira T, Tanigawa S, Aoki Y, Yoshikawa M, Mikdo T. Investigation of vacancy-type defects in P+-implanted 6H-SiC using monoenergetic positron beams. Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), vol.37, no.5A, May 1998, pp. 2422-9. Publisher: Publication Office, Japanese Journal Appl. Phys, Japan.

116) Ohdaira T, Suzuki R, Mikado T, Yamazaki T. Positron annihilation induced Auger electron spectroscopy with an intense slow-positron beam. Elsevier. Journal of Electron Spectroscopy and Related Phenomena, vol.88-91, March 1998, pp. 677-81.  Netherlands.

117) Ohshima T, Uedono A, Itoh H, Abe K, Suzuki R, Ohdaira T, Aoki Y, Yoshikawa M, Mikado T, Okumura H, Yoshida S, Tanigawa S, Nashiyama I. Study of thermal annealing of vacancies in ion implanted 3C-SiC by positron annihilation. Trans Tech Publications. Materials Science Forum, vol.264-268, pt.2, 1998, pp. 745-8.  Switzerland.

118) Ohdaira T, Suzuki R, Mikado T, Yamazaki T. Auger line shape analysis by time-of-flight positron-annihilation induced Auger-electron spectroscopy. Trans Tech Publications. Materials Science Forum, vol.255-257, 1997, pp. 769-71.  Switzerland.

119) Suzuki R, Ohdaira T, Uedono A, Ishibashi S, Matsuda A, Yoshida S, Ishida Y, Niki S, Fons PJ, Mikado T, Yamazaki T, Tanigawa S, Cho YK. Positron lifetime study on semiconductor thin films. Trans Tech Publications. Materials Science Forum, vol.255-257, 1997, pp. 714-17.  Switzerland.

120) Zhang R, Cao H, Yuan J-P, Huang C-M, Zhang Q, Sandreczki TC, Nielsen B, Asoka-Kumar P, Suzuki R, Ohdaira T, Jean YC. Surface properties of polymers studied by slow positron annihilation spectroscopy. Trans Tech Publications. Materials Science Forum, vol.255-257, 1997, pp. 704-7.  Switzerland.

121) Xu J, Hulett LD, Somieski B, Suzuki R, Ohdaira T. Variable-energy positron lifetime studies of Al2O3  films on aluminide metals. Trans Tech Publications. Materials Science Forum, vol.255-257, 1997, pp. 214-17.  Switzerland.

122) Suzuki R, Ohdaira T, Mikado T, Uedono A, Ohgaki H, Yamazaki T, Tanigawa S. Moderation of positrons generated by an electron linac. Trans Tech Publications. Materials Science Forum, vol.255-257, 1997, pp. 114-18.  Switzerland.

123) Uedono A, Itoh H, Ohshima T, Suzuki R, Ohdaira T, Tanigawa S, Aoki Y, Yoshikawa M, Nashiyama I, Mikado T, Okumura H, Yoshida S. Annealing properties of defects in ion-implanted 3C-SiC studied using monoenergetic positron beams. Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), vol.36, no.11, Nov. 1997, pp. 6650-60. Publisher: Publication Office, Japanese Journal Appl. Phys, Japan.

124) Jun Xu, Somieski B, Hulett LD, Pint BA, Tortorelli PF, Suzuki R, Ohdaira T. Microdefects in Al2O3 films and interfaces revealed by positron lifetime spectroscopy. Applied Physics Letters, vol.71, no.21, 24 Nov. 1997, pp. 3165-7. Publisher: AIP, USA.

125) Kitano T, Watanabe M, Yaoita A, Oguro S, Uedono A, Moriya T, Tanigawa S, Kawano T, Suzuki R, Ohdaira T, Mikado T. Annealing properties of defects in BF2+ implanted silicon. Microstructure Evolution During Irradiation. Symposium. Mater. Res. Soc. 1997, pp. 143-8. Pittsburgh, PA, USA. 

126) Watanabe M, Kitano T, Asada S, Uedono A, Moriya T, Kawano T, Tanigawa S, Suzuki R, Ohdaira T, Mikado T. Effects of vacancy-type defects on electrical-activation of P+  implanted into silicon. Microstructure Evolution During Irradiation. Symposium. Mater. Res. Soc. 1997, pp. 95-100. Pittsburgh, PA, USA. 

127) Yamazaki T, Suzuki R, Ohdaira T, Mikado T, Kobayashi Y. Production and application of pulsed slow-positron beam using an electron linac. Recent Progress in Accelerator Beam Application. Proceedings of the 7th International Symposium on Advanced Nuclear Energy Research (JAERI-Conf 97-003). JAERI. 1997, pp. 143-8. Ibaraki-ken, Japan. 

128) Yamada K, Yamazaki T, Sei N, Suzuki R, Ohdaira T, Shimizu T, Kawai M, Yokoyama M, Mikado T, Noguchi T, Sugiyama S, Ohgaki H. Saturation of cavity-mirror degradation in the UV FEL. Elsevier. Nuclear Instruments & Methods in Physics Research, Section A (Accelerators, Spectrometers, Detectors and Associated Equipment), vol.393, no.1-3, 1 July 1997, pp. 44-9.  Netherlands.

129) Kitano T, Watanabe M, Yaoita A, Oguro S, Uedono A, Moriya T, Tanigawa S, Kawano T, Suzuki R, Ohdaira T, Mikado T. Annealing properties of defects in BF2+ implanted silicon. Materials Modification and Synthesis by Ion Beam Processing. Symposium. Mater. Res. Soc. 1997, pp. 137-42. Pittsburgh, PA, USA. 

130) Watanabe M, Kitano T, Asada S, Uedono A, Moriya T, Kawano T, Tanigawa S, Suzuki S, Ohdaira T, Mikado T. Effects of vacancy-type defects on electrical-activation of P+  implanted into silicon. Materials Modification and Synthesis by Ion Beam Processing. Symposium. Mater. Res. Soc. 1997, pp. 131-6. Pittsburgh, PA, USA. 

131) Yamada K, Yamazaki T, Sei N, Ohgaki H, Mikado T, Noguchi T, Sugiyama S, Suzuki R, Ohdaira T, Kawai M, Yokoyama M. Challenge to deep UV and VUV FEL in a small-scale storage ring. SPIE-Int. Soc. Opt. Eng. Proceedings of the SPIE - The International Society for Optical Engineering, vol.2988, 1997, pp. 134-44.  USA.

132) Uedono A, Fujii S, Moriya T, Kawano T, Tanigawa S, Suzuki R, Ohdaira T, Mikado T. Defects in the Ti/GaAs system probed by monoenergetic positron beams. Journal of Physics: Condensed Matter, vol.9, no.32, 11 Aug. 1997, pp. 6827-35. Publisher: IOP Publishing, UK.

133) Uedono A, Kitano T, Hamada K, Moriya T, Kawano T, Tanigawa S, Suzuki R, Ohdaira T, Mikado T. Annealing properties of defects in B+- and F+-implanted Si studied using monoenergetic positron beams. Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), vol.36, no.5A, May 1997, pp. 2571-80. Publisher: Publication Office, Japanese Journal Appl. Phys, Japan.

134) Ishibashi S, Tokumoto M, Kinoshita N, Terada N, Ihara H, Suzuki R, Ohdaira T, Mikado T, Anzai H. Positron lifetimes in TTF-TCNQ and κ-(BEDT-TTF)2Cu(NCS)2 single crystals. Elsevier. Applied Surface Science, vol.116, May 1997, pp. 300-3.  Netherlands.

135) Jean YC, Cao H, Dai GH, Suzuki R, Ohdaira T, Kobayashi Y, Hirata K. Free-volume hole properties near the surface of polymers obtained from slow positron annihilation spectroscopy. Elsevier. Applied Surface Science, vol.116, May 1997, pp. 251-5.  Netherlands.

136) Suzuki R, Ohdaira T, Mikado T, Ohgaki H, Chiwaki M, Yamazaki T. Control and measurement system for positron experiments at the ETL linac facility. Elsevier. Applied Surface Science, vol.116, May 1997, pp. 187-91.  Netherlands.

137) Ohdaira T, Suzuki R, Mikado T, Ohgaki H, Chiwaki M, Yamazaki T. An apparatus for high-resolution positron-annihilation induced Auger-electron spectroscopy using a time-of-flight technique. Elsevier. Applied Surface Science, vol.116, May 1997, pp. 177-80.  Netherlands.

138) Hirata K, Kobayashi Y, Hishita S, Zhao X, Itoh Y, Ohdaira T, Suzuki R, Ujihira Y. Variable-energy positron beam system and its application to depth-selective defect analysis. Elsevier. Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), vol.121, no.1-4, Jan. 1997, pp. 267-70.  Netherlands.

139) Uedono A, Kitano T, Watanabe M, Moriya T, Komuro N, Kawano T, Tanigawa S, Suzuki R, Ohdaira T, Mikado T. Fluorine-related defects in BF2+-implanted Si probed by monoenergetic positron beams. Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), vol.36, no.3A, March 1997, pp. 969-74. Publisher: Publication Office, Japanese Journal Appl. Phys, Japan.

140) Ishibashi S, Tokumoto M, Kinoshita N, Terada N, Ihara H, Suzuki R, Ohdaira T, Mikado T, Anzai H. Positron lifetimes in molecular crystals. Natl. Res. Council Canada. Canadian Journal of Physics, vol.74, no.7-8, July-Aug. 1996, pp. 534-9.  Canada.

141) Suzuki R, Ohdaira T, Mikado T, Ohgaki H, Chiwaki M, Yamazaki T. Apparatus for positron-annihilation-induced Auger electron spectroscopy with a pulsed positron beam. Elsevier. Applied Surface Science, vol.100-101, July 1996, pp. 297-300.  Netherlands.

142) Ohdaira T, Suzuki R, Mikado T, Ohgaki H, Chiwaki M, Yamazaki T, Hasegawa M. High sensitivity of positron-annihilation induced Auger-electron spectroscopy to surface impurities. Elsevier. Applied Surface Science, vol.100-101, July 1996, pp. 73-6.  Netherlands.

143) Uedono A, Kitano T, Watanabe N, Moriya T, Kawano T, Tanigawa S, Suzuki R, Ohdaira T, Mikado T. Effects of recoil-implanted oxygen on depth profiles of defects and annealing processes in P+-implanted Si studied using monoenergetic positron beams. Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), vol.35, no.4A, April 1996, pp. 2000-7. Publisher: Publication Office, Japanese Journal Appl. Phys, Japan.

144) Motooka T, Hiroyama Y, Suzuki R, Ohdaira T, Hirano Y, Sato F. Role of defects during amorphization and relaxation processes in Si. Elsevier. Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), vol.B106, no.1-4, Dec. 1995, pp. 198-205.  Netherlands.

145) Ohdaira T, Suzuki R, Mikado T, Ohgaki H, Chiwaki M, Yamazaki T. Time-of-flight measurements of positron-annihilation induced Auger electrons. Proceedings of the 10th Symposium on Accelerator Science and Technology (JAERI-Conf 95-021). JAERI. 1995, pp. 395-7. Ibaraki-ken, Japan. 

146) Uedono A, Nanao S, Tanigawa S, Suzuki R, Ohdaira T, Mikado T, Ishibashi S. Defects in TiN films probed by monoenergetic positron beams. Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), vol.34, no.10, Oct. 1995, pp. 5711-16.  Japan.

147) Suzuki R, Ohdaira T, Mikado T, Ohgaki H, Chiwaki M, Yamazaki T, Kobayashi Y. Pulsing of an intense slow positron-beam and its applications. Bulletin of the Electrotechnical Laboratory, vol.59, no.4, 1995, pp. 1-15.  Japan.

148) Suzuki R, Ohdaira T, Yamazaki T, Mikado T, Ohgaki H, Kobayashi Y, Yamada K, Chiwaki M. Slow-positron facility at the ETL-improvement of the transport system and research programs. Proceedings of the 19th Linear Accelerator Meeting in Japan (JAERI 94-003). Japan Atomic Energy Res. Inst. 1994, pp. 34-6. Ibaraki, Japan. 

149) Uedono A, Kawano T, Tanigawa S, Suzuki R, Ohdaira T, Mikado T, Fujii S, Shikata S. Vacancy-type defects in ion-implanted diamonds probed by monoenergetic positron beams. Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), vol.34, no.4A, April 1995, pp. 1772-7.  Japan.