We have succeeded to develope a method of crystal growth under ultra low oxygen partial pressure for less than 10 to -24 atom. Now it is possible to develop high-quality single crystals of oxide compounds by our method. For example,
Mo oxides（SrMoO3, etc）.
SrIrO3, SrRhO3, .....
Si crystal.
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Si crystal obtained under ultra low oxygen partial pressure.
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